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Results: 1-7 |
Results: 7
Native defects and complexes in SiC
Authors: Bechstedt, F Fissel, A Furthmuller, J Grossner, U Zywietz, A
Citation: F. Bechstedt et al., Native defects and complexes in SiC, J PHYS-COND, 13(40), 2001, pp. 9027-9037
Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111) - art. no. 165308
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Stability, reconstruction, and surface electronic states of group-III atoms on SiC(111) - art. no. 165308, PHYS REV B, 6416(16), 2001, pp. 5308
Dielectric and lattice-dynamical properties of III-nitrides
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Dielectric and lattice-dynamical properties of III-nitrides, J ELEC MAT, 29(3), 2000, pp. 281-284
Dynamics and polarization of group-III nitride lattices: A first-principles study
Authors: Bechstedt, F Grossner, U Furthmuller, J
Citation: F. Bechstedt et al., Dynamics and polarization of group-III nitride lattices: A first-principles study, PHYS REV B, 62(12), 2000, pp. 8003-8011
Adsorption of group III atoms on SiC(111) surfaces
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Adsorption of group III atoms on SiC(111) surfaces, SURF SCI, 454, 2000, pp. 127-130
Surface energies and surface dipoles at III-nitride(111) surfaces in dependence on stoichiometry
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Surface energies and surface dipoles at III-nitride(111) surfaces in dependence on stoichiometry, PHYS ST S-B, 216(1), 1999, pp. 675-678
Initial stages of III-nitride growth
Authors: Grossner, U Furthmuller, J Bechstedt, F
Citation: U. Grossner et al., Initial stages of III-nitride growth, APPL PHYS L, 74(25), 1999, pp. 3851-3853
Risultati: 1-7 |