Authors:
Gueorguiev, VK
Ivanov, TE
Dimitriadis, CA
Andreev, SK
Popova, LI
Citation: Vk. Gueorguiev et al., Oxide field enhancement corrected time dependent dielectric breakdown of polyoxides, MICROELEC J, 31(8), 2000, pp. 663-666
Authors:
Gueorguiev, VK
Ivanov, TE
Dimitriadis, CA
Popova, LI
Andreev, SK
Citation: Vk. Gueorguiev et al., Electron trapping probabilities in hydrogen ion implanted silicon dioxide films thermally grown on polycrystalline silicon, MICROELEC J, 31(3), 2000, pp. 207-211
Authors:
Angelis, CT
Dimitriadis, CA
Farmakis, FV
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
Citation: Ct. Angelis et al., Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors, APPL PHYS L, 76(1), 2000, pp. 118-120
Authors:
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
Citation: Fv. Farmakis et al., Hot-carrier phenomena in high temperature processed undoped-hydrogenated n-channel polysilicon thin film transistors (TFTs), SOL ST ELEC, 43(7), 1999, pp. 1259-1266
Authors:
Farmakis, FV
Brini, J
Kamarinos, G
Dimitriadis, CA
Gueorguiev, VK
Ivanov, TE
Citation: Fv. Farmakis et al., Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs), MICROEL REL, 39(6-7), 1999, pp. 885-889
Authors:
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
Citation: Fv. Farmakis et al., Photon emission and related hot-carrier effects in polycrystalline siliconthin-film transistors, J APPL PHYS, 85(9), 1999, pp. 6917-6919
Authors:
Dimitriadis, CA
Kamarinos, G
Brini, J
Evangelou, EK
Gueorguiev, VK
Citation: Ca. Dimitriadis et al., Avalanche-induced excess noise in polycrystalline silicon thin-film transistors, APPL PHYS L, 74(1), 1999, pp. 108-110
Authors:
Farmakis, FV
Dimitriadis, CA
Brini, J
Kamarinos, G
Gueorguiev, VK
Ivanov, TE
Citation: Fv. Farmakis et al., Interface state generation during electrical stress in n-channel undoped hydrogenated polysilicon thin-film transistors, ELECTR LETT, 34(24), 1998, pp. 2356-2357