Citation: Ja. Gupta et Dd. Awschalom, Spin precession and the optical Stark effect in a semiconductor-doped glass - art. no. 085303, PHYS REV B, 6308(8), 2001, pp. 5303
Authors:
Landheer, D
Gupta, JA
Sproule, GI
McCaffrey, JP
Graham, MJ
Yang, KC
Lu, ZH
Lennard, WN
Citation: D. Landheer et al., Characterization of Gd2O3 films deposited on Si(100) by electron-beam evaporation, J ELCHEM SO, 148(2), 2001, pp. G29-G35
Authors:
Gupta, JA
Woicik, JC
Watkins, SP
Harrison, DA
Crozier, ED
Karlin, BA
Citation: Ja. Gupta et al., Layer perfection in ultrathin MOVPE-grown InAs layers buried in GaAs(001) studied by X-ray standing waves and photoluminescence spectroscopy, J SYNCHROTR, 6, 1999, pp. 500-502
Authors:
Gupta, JA
Woicik, JC
Watkins, SP
Miyano, KE
Pellegrino, JG
Crozier, ED
Citation: Ja. Gupta et al., An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown byatomic layer epitaxy, J CRYST GR, 195(1-4), 1998, pp. 34-40
Authors:
Gupta, JA
Watkins, SP
Ares, R
Soerensen, G
Citation: Ja. Gupta et al., MOVPE growth of single monolayers of InAs in GaAs studied by time-resolvedreflectance difference spectroscopy, J CRYST GR, 195(1-4), 1998, pp. 205-210
Authors:
Woicik, JC
Gupta, JA
Watkins, SP
Crozier, ED
Citation: Jc. Woicik et al., Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001), APPL PHYS L, 73(9), 1998, pp. 1269-1271