Citation: E. Griffiths et Rs. Gupta, The use of signature sequences in different proteins to determine the relative branching order of bacterial divisions: evidence that Fibrobacter diverged at a similar time to Chlamydia and the Cytophaga-Flavobacterium-Bacteroides division, MICROBI-SGM, 147, 2001, pp. 2611-2622
Citation: B. Singh et al., Gene structure for adenosine kinase in Chinese hamster and human: High-frequency mutants of CHO cells involve deletions of several introns and exons, DNA CELL B, 20(1), 2001, pp. 53-65
Authors:
Kumar, A
Gupta, RS
Srivastava, A
Bansal, P
Citation: A. Kumar et al., Sequential anastomosis of accessory renal artery to inferior epigastric artery in the management of multiple arteries in live related renal transplantation: a critical appraisal, CLIN TRANSP, 15(2), 2001, pp. 131-135
Citation: S. Kranti, A",rashmi,"haldar et Rs. Gupta, An accurate 2-D model for transconductance-to-current ratio and drain conductance of vertical surrounding-gate (VSG) mosfets for microwave circuit applications, MICROW OPT, 31(6), 2001, pp. 415-421
Citation: A. Singh et al., Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications, MICROW OPT, 31(5), 2001, pp. 387-393
Citation: A. Goswami et al., Analysis of scattering parameters and thermal noise of a MOSFET for its microwave frequency applications, MICROW OPT, 31(2), 2001, pp. 97-105
Citation: S. Rashmi,"haldar et Rs. Gupta, 2-D analytical model for current-voltage characteristics and output conductance of AlGaN/GaN MODFET, MICROW OPT, 29(2), 2001, pp. 117-123
Citation: J. Jogi et al., Carrier-concentration-dependent low-filed-mobility model for InAlAs/InGaAs/InP lattice-matched HEMT for microwave application, MICROW OPT, 29(1), 2001, pp. 66-70
Citation: A. Kranti et al., An analytical two-dimensional model for an optically controlled thin-film fully depleted surrounding/cylindrical-gate (SGT) MOSFET, MICROW OPT, 28(2), 2001, pp. 135-141
Citation: A. Kranti et al., Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET, MICROEL ENG, 56(3-4), 2001, pp. 241-259
Citation: A. Kranti et al., An accurate 2D analytical model for short channel thin film fully depletedcylindrical/surrounding gate (CGT/SGT) MOSFET, MICROELEC J, 32(4), 2001, pp. 305-313
Citation: J. Jogi et al., A new extrinsic dc model for high speed lattice matched InAlAs/InGaAs/InP HEMT with a predicted 135 GHz cut-off frequency, MICROELEC J, 32(12), 2001, pp. 925-930
Authors:
Bose, S",Adarsh,"Kumar, A",Simrata,"Gupta, M
Gupta, RS
Citation: M. Bose, S",adarsh,"kumar, A",simrata,"gupta et Rs. Gupta, A complete analytical model of GaN MESFET for microwave frequency applications, MICROELEC J, 32(12), 2001, pp. 983-990
Citation: S. Chopra et Rs. Gupta, Cut-off frequency and transit time analysis in short geometry polysilicon thin-film transistors, INT J ELECT, 88(2), 2001, pp. 127-143
Citation: Rs. Dhanotiya et al., Sequential variation in aminotransferase activity during foetal development in ruminant, I VET J, 78(9), 2001, pp. 857-858
Authors:
Kumar, A
Kalra, E
Bose, S
Singh, A
Bindra, S
Haldar, S
Gupta, RS
Citation: A. Kumar et al., Analytical model for saturation drain current and substrate current of fully overlapped LDD MOSFET, I J PA PHYS, 39(11), 2001, pp. 731-737
Citation: S. Kranti, A",rashmi,"haldar et Rs. Gupta, Optimisation for improved short-channel performance of surrounding/cylindrical gate MOSFETs, ELECTR LETT, 37(8), 2001, pp. 533-534