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Results:
1-13
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Results: 13
Authors:
KOSTER T
HADAM B
GOLDSCHMIDTBOING F
HOFMANN K
GONDERMANN J
STEIN J
HU S
ALTMEYER S
SPANGENBERG B
KURZ H
Citation: T. Koster et al., MOS-COMPATIBLE FABRICATION AND CHARACTERIZATION OF TUNNEL-JUNCTIONS IN BESOI-MATERIAL, Microelectronic engineering, 42, 1998, pp. 531-534
Authors:
KOSTER T
HADAM B
HOFMANN K
GONDERMANN J
STEIN J
HU S
ALTMEYER S
SPANGENBERG B
KURZ H
Citation: T. Koster et al., METAL-OXIDE-SEMICONDUCTOR-COMPATIBLE SILICON-BASED SINGLE-ELECTRON TRANSISTOR USING BONDED AND ETCHED BACK SILICON-ON-INSULATOR MATERIAL, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2836-2839
Authors:
KOSTER T
STEIN J
HADAM B
GONDERMANN J
SPANGENBERG B
ROSKOS HG
KURZ H
HOLZMANN M
RIEDINGER M
ABSTREITER G
Citation: T. Koster et al., FABRICATION AND CHARACTERIZATION OF SIGE BASED IN-PLANE-GATE TRANSISTORS, Microelectronic engineering, 35(1-4), 1997, pp. 301-304
Authors:
GONDERMANN J
SCHIEPANSKI J
HADAM B
KOSTER T
ROWER T
STEIN J
SPANGENBERG B
ROSKOS H
KURZ H
Citation: J. Gondermann et al., NEW CONCEPT FOR ULTRA-SMALL N-MOSFETS, Microelectronic engineering, 35(1-4), 1997, pp. 305-308
Authors:
GONDERMANN J
ROWER T
HADAM B
KOSTER T
STEIN J
SPANGENBERG B
ROSKOS H
KURZ H
Citation: J. Gondermann et al., A TRIANGLE-SHAPED NANOSCALE METAL-OXIDE-SEMICONDUCTOR DEVICE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4042-4045
Authors:
KOSTER T
GONDEMANN J
HADAM B
SPANGENBERG B
SCHUTZE M
ROSKOS HG
KURZ H
BRUNNER J
ABSTREITER G
Citation: T. Koster et al., OPTICAL-PROPERTIES OF REACTIVE-ION-ETCHED SI SI1-XGEX HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 698-706
Authors:
KOSTER T
HADAM B
GONDERMANN J
SPANGENBERG B
ROSKOS HG
KURZ H
BRUNNER J
ABSTREITER G
Citation: T. Koster et al., INVESTIGATION OF SI SIGE HETEROSTRUCTURES PATTERNED BY REACTIVE ION ETCHING/, Microelectronic engineering, 30(1-4), 1996, pp. 341-344
Authors:
BARTH R
HAMIDI AH
HADAM B
HOLLKOTT J
DUNKMANN D
AUGE J
KURZ H
Citation: R. Barth et al., ELECTRON-BEAM LITHOGRAPHY AND ION-IMPLANTATION TECHNIQUES FOR FABRICATION OF HIGH-T-C JOSEPHSON-JUNCTIONS, Microelectronic engineering, 30(1-4), 1996, pp. 407-410
Authors:
GOTZ D
HADAM B
IDINK H
HAHN T
GOBBELS M
WOERMANN E
Citation: D. Gotz et al., STRUCTURAL AND SUPERCONDUCTING PROPERTIES OF BI2-MPBMSR2CA2CU3O10-DELTA WITH 0-LESS-THAN-OR-EQUAL-TO-M-LESS-THAN-OR-EQUAL-TO-1, Physica. C, Superconductivity, 242(3-4), 1995, pp. 291-302
Authors:
GONDERMANN J
SPANGENBERG B
KOSTER T
HADAM B
ROSKOS HG
KURZ H
BRUNNER J
SCHITTENHELM P
ABSTREITER G
GOSSNER H
EISELE I
Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF LOCALLY GROWN SIGE WIRES AND DOTS, Materials science and technology, 11(4), 1995, pp. 407-409
Authors:
GONDERMANN J
SPANGENBERG B
KOSTER T
HADAM B
ROSKOS HG
KURZ H
BRUNNER J
SCHITTENHELM P
ABSTREITER G
GOSSNER H
EISELE I
Citation: J. Gondermann et al., FABRICATION AND CHARACTERIZATION OF SI SIGE NANOMETER STRUCTURES/, Microelectronic engineering, 27(1-4), 1995, pp. 83-86
Authors:
BRUNNER J
JUNG W
SCHITTENHELM P
GAIL M
ABSTREITER G
GONDERMAN J
HADAM B
KOESTER T
SPANGENBERG B
ROSKOS HG
KURZ H
GOSSNER H
EISELE I
Citation: J. Brunner et al., LOCAL EPITAXY OF SI SIGE WIRES AND DOTS, Journal of crystal growth, 157(1-4), 1995, pp. 270-275
Authors:
BRUNNER J
SCHITTENHELM P
GONDERMANN J
SPANGENBERG B
HADAM B
KOSTER T
ROSKOS HG
KURZ H
GOSSNER H
EISELE I
ABSTREITER G
Citation: J. Brunner et al., SIGE WIRES AND DOTS GROWN BY LOCAL EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 1060-1064
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