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Results:
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Results: 15
Authors:
HAGEMAN PR
BAUHUIS GJ
OLSTHOORN SM
Citation: Pr. Hageman et al., INFLUENCE OF GA PRECURSOR CHOICE ON ORDERING DEGREE OF MOVPE GROWN GA0.5IN0.5P, Journal of crystal growth, 194(2), 1998, pp. 272-275
Authors:
BAUHUIS GJ
HAGEMAN PR
LARSEN PK
Citation: Gj. Bauhuis et al., HEAVILY-DOPED P-TYPE ALGAINP GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 191(3), 1998, pp. 313-318
Authors:
VANGEELEN A
HAGEMAN PR
BAUHUIS GJ
VANRIJSINGEN PC
SCHMIDT P
GILING LJ
Citation: A. Vangeelen et al., EPITAXIAL LIFT-OFF GAAS SOLAR-CELL FROM A REUSABLE GAAS SUBSTRATE, Materials science & engineering. B, Solid-state materials for advanced technology, 45(1-3), 1997, pp. 162-171
Authors:
HAGEMAN PR
TENIJENHUIS J
ANDERS MJ
GILING LJ
Citation: Pr. Hageman et al., DEPENDENCE OF IMPURITY INCORPORATION UPON SUBSTRATE MISORIENTATION DURING GAAS GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 170(1-4), 1997, pp. 270-275
Authors:
BASTOS PL
ANDERS MJ
BONGERS MMG
HAGEMAN PR
GILING LJ
Citation: Pl. Bastos et al., TEMPERATURE-DEPENDENCE ON THE EMERGING CRYSTAL HABIT OF GAINP DEPOSITED ON NONPLANAR (001)GAAS SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 710-714
Authors:
DRIESSEN FAJM
CHEONG HM
MASCARENHAS A
DEB SK
HAGEMAN PR
BAUHUIS GJ
GILING LJ
Citation: Fajm. Driessen et al., INTERFACE-INDUCED CONVERSION OF INFRARED TO VISIBLE-LIGHT AT SEMICONDUCTOR INTERFACES, Physical review. B, Condensed matter, 54(8), 1996, pp. 5263-5266
Authors:
TENIJENHUIS J
HAGEMAN PR
GILING LJ
Citation: J. Tenijenhuis et al., DEPENDENCE OF INDIUM INCORPORATION UPON THE SUBSTRATE MISORIENTATION DURING GROWTH OF IN(X)GA(1)1-XAS BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 167(3-4), 1996, pp. 397-405
Authors:
DRIESSEN FAJM
HAGEMAN PR
OLSTHOORN SM
GILING LJ
Citation: Fajm. Driessen et al., PHOTOLUMINESCENCE OF MODULATION-DOPED ORDERED DISORDERED GALNP(2) HOMOJUNCTIONS - INTRINSIC VERSUS EXTRINSIC EMISSIONS, Applied physics letters, 66(5), 1995, pp. 586-588
Authors:
CHRISTIANEN PCM
DEBEKKER EJA
BLUYSSEN HJA
HAGEMAN PR
LEYS MR
Citation: Pcm. Christianen et al., COOLING REDUCTION DUE TO A RAPID DENSITY DECAY OF HOT CARRIERS IN GAAS, Semiconductor science and technology, 9(5), 1994, pp. 713-715
Authors:
DRIESSEN FAJM
BAUHUIS GJ
HAGEMAN PR
VANGEELEN A
GILING LJ
Citation: Fajm. Driessen et al., ANISOTROPIC TRANSPORT-PROPERTIES OF THE 2-DIMENSIONAL ELECTRON-GAS INORDERED-DISORDERED GAINP2 HOMOJUNCTIONS - THE STRUCTURE OF ORDERED DOMAINS, Physical review. B, Condensed matter, 50(23), 1994, pp. 17105-17110
Authors:
HAGEMAN PR
DRIESSEN FAJM
BAUHUIS GJ
GILING LJ
Citation: Pr. Hageman et al., 2-DIMENSIONAL ELECTRON GASES IN LOW-PRESSURE METALORGANIC VAPOR-PHASEEPITAXIALLY GROWN INGAP HOMOJUNCTIONS, Journal of crystal growth, 145(1-4), 1994, pp. 958-962
Authors:
HAGEMAN PR
OLSTHOORN SM
GILING LJ
Citation: Pr. Hageman et al., GROWTH OF HIGH-QUALITY ALXGA1-XAS (X=0.05-0.65) BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING DIMETHYLETHYLAMINE-ALANE, Journal of crystal growth, 142(3-4), 1994, pp. 284-291
Authors:
ANDERS MJ
HAGEMAN PR
GILING LJ
Citation: Mj. Anders et al., MISORIENTATION DEPENDENCE OF ZINC INCORPORATION IN GAAS, Journal of crystal growth, 142(3-4), 1994, pp. 292-297
Authors:
DRIESSEN FAJM
BAUHUIS GJ
HAGEMAN PR
GILING LJ
Citation: Fajm. Driessen et al., 2-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED, ORDERED-DISORDERED GAINP2 HOMOJUNCTIONS, Applied physics letters, 65(6), 1994, pp. 714-716
Authors:
THOMEER RAJ
HAGEMAN PR
GILING LJ
Citation: Raj. Thomeer et al., RADIATIVELY CONTROLLED LIFETIMES IN ALXGA1-XAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 64(12), 1994, pp. 1561-1562
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1-15
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