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Results: 1-8 |
Results: 8
THE ORIGIN OF HILLOCKS IN (HG,CD)TE GROWN BY MOVPE
Authors: HAILS JE COLEHAMILTON DJ GIESS J
Citation: Je. Hails et al., THE ORIGIN OF HILLOCKS IN (HG,CD)TE GROWN BY MOVPE, Journal of electronic materials, 27(6), 1998, pp. 624-633
GAS-PHASE DECOMPOSITION OF METEBUT AND ITS RELEVANCE TO THE MOVPE OF MERCURY CADMIUM TELLURIDE
Authors: HAILS JE COLEHAMILTON DJ EWAN A MCQUEEN AED
Citation: Je. Hails et al., GAS-PHASE DECOMPOSITION OF METEBUT AND ITS RELEVANCE TO THE MOVPE OF MERCURY CADMIUM TELLURIDE, Journal of crystal growth, 183(4), 1998, pp. 594-603
THE ROLE OF SURFACE ADSORBATES IN THE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF (HG,CD)TE ONTO (100) GAAS SUBSTRATES
Authors: GIESS J HAILS JE GRAHAM A BLACKMORE G HOULTON MR NEWEY J YOUNG ML ASTLES MG BELL W COLEHAMILTON DJ
Citation: J. Giess et al., THE ROLE OF SURFACE ADSORBATES IN THE METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF (HG,CD)TE ONTO (100) GAAS SUBSTRATES, Journal of electronic materials, 24(9), 1995, pp. 1149-1153
THE ROLE OF THE INITIAL NUCLEATION STAGE IN MICROSTRUCTURAL DEVELOPMENT FOR CDTE GROWN ON HEAT-CLEANED 2-DEGREES-OFF (001)GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: CHENG TT AINDOW M JONES IP HAILS JE WILLIAMS DJ
Citation: Tt. Cheng et al., THE ROLE OF THE INITIAL NUCLEATION STAGE IN MICROSTRUCTURAL DEVELOPMENT FOR CDTE GROWN ON HEAT-CLEANED 2-DEGREES-OFF (001)GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 154(3-4), 1995, pp. 251-261
EVIDENCE FOR A SURFACE-BOUND FREE-RADICAL MECHANISM DURING THE DECOMPOSITION OF (I)PR2TE IN THE PRESENCE OR ABSENCE OF MERCURY AND OR ME2CDUNDER MOVPE CONDITIONS OBTAINED FROM DEUTERIUM-LABELED PRECURSORS
Authors: BELL W STEVENSON J COLEHAMILTON DJ HAILS JE
Citation: W. Bell et al., EVIDENCE FOR A SURFACE-BOUND FREE-RADICAL MECHANISM DURING THE DECOMPOSITION OF (I)PR2TE IN THE PRESENCE OR ABSENCE OF MERCURY AND OR ME2CDUNDER MOVPE CONDITIONS OBTAINED FROM DEUTERIUM-LABELED PRECURSORS, Polyhedron, 13(8), 1994, pp. 1253-1265
MECHANISMS OF DECOMPOSITION OF GROUP-VI DIALKYLS AND ALKYLHYDRIDES INTHE GAS-PHASE FROM STUDIES OF DESIGNED PRECURSORS
Authors: FOSTER DF BELL W STEVENSON J COLEHAMILTON DJ HAILS JE
Citation: Df. Foster et al., MECHANISMS OF DECOMPOSITION OF GROUP-VI DIALKYLS AND ALKYLHYDRIDES INTHE GAS-PHASE FROM STUDIES OF DESIGNED PRECURSORS, Journal of crystal growth, 145(1-4), 1994, pp. 520-529
METHYL(ALLYL)TELLURIDE AS A TE PRECURSOR FOR GROWTH OF (HG,CD)TE BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: HAILS JE COLEHAMILTON DJ BELL W
Citation: Je. Hails et al., METHYL(ALLYL)TELLURIDE AS A TE PRECURSOR FOR GROWTH OF (HG,CD)TE BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 145(1-4), 1994, pp. 596-601
THE INFLUENCE OF SUBSTRATE SURFACE PREPARATION ON THE MICROSTRUCTURE OF CDTE GROWN ON (001) GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: CHENG TT AINDOW M JONES IP HAILS JE WILLIAMS DJ ASTLES MG
Citation: Tt. Cheng et al., THE INFLUENCE OF SUBSTRATE SURFACE PREPARATION ON THE MICROSTRUCTURE OF CDTE GROWN ON (001) GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 135(3-4), 1994, pp. 409-422
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