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Citation: C. Khanna Mk",maneesha,"thomas et al., AN ANALYTICAL MODEL FOR ANOMALOUS THRESHOLD VOLTAGE BEHAVIOR OF SHORT-CHANNEL MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1386-1388

Authors: MANEESHA,"HALDAR S KHANNA MK GUPTA RS

Citation: S. Maneesha,"haldar et al., ANALYTICAL THEORY OF 2-DIMENSIONAL CHARGE SHEET MODEL FOR SHORT-CHANNEL MOSFETS UNDER NON-LINEAR CHARGE CONTROL, Solid-state electronics, 38(1), 1995, pp. 197-202

Authors: HALDAR S KHANNA MK",MANEESHA,"SOOD R",MANJU,"AGGARWAL V GUPTA RS

Citation: S. Haldar et al., THRESHOLD VOLTAGE SHIFT IN DEPLETION MODE INSULATED GATE FIELD-EFFECTTRANSISTORS, Solid-state electronics, 37(2), 1994, pp. 377-379

Authors: HALDAR S",MANEESHA,"KHANNA MK GUPTA RS

Citation: Mk. Haldar S",maneesha,"khanna et Rs. Gupta, A DEVICE MODEL FOR AN ION-IMPLANTED MESFET WITH HALF-PEARSON AND HALF-GAUSSIAN DISTRIBUTION UNDER POST-ANNEAL CONDITIONS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1674-1677