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Results:
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Results: 24
Authors:
BRIERE O
BARLA K
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS (VOL 41, PG 987, 1997), Solid-state electronics, 42(5), 1998, pp. 881-881
Authors:
BUTTARD D
DOLINO G
CAMPIDELLI Y
HALIMAOUI A
Citation: D. Buttard et al., X-RAY STUDY OF UHV-CVD FILLING OF POROUS SILICON BY GE, Journal of crystal growth, 183(3), 1998, pp. 294-304
Authors:
HALIMAOUI A
BRIERE O
GHIBAUDO G
Citation: A. Halimaoui et al., QUASI-BREAKDOWN IN ULTRATHIN GATE DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 157-160
Authors:
BRIERE O
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., BREAKDOWN CHARACTERISTICS OF ULTRA-THIN GATE OXIDES FOLLOWING FIELD AND TEMPERATURE STRESSES, Solid-state electronics, 41(7), 1997, pp. 981-985
Authors:
BRIERE O
BARLA K
HALIMAOUI A
GHIBAUDO G
Citation: O. Briere et al., OSCILLATORY BEHAVIOR OF THE TUNNELING CURRENT IN ULTRA-THIN GATE DIELECTRICS - INFLUENCE OF VARIOUS PHYSICAL AND TECHNOLOGICAL PARAMETERS, Solid-state electronics, 41(7), 1997, pp. 987-990
Authors:
DMOWSKI K
HALIMAOUI A
Citation: K. Dmowski et A. Halimaoui, THE INFLUENCE OF QUANTUM EFFECTS ON THE DETERMINATION OF GATE OXIDE THICKNESS FROM C-V MEASUREMENTS, Journal of non-crystalline solids, 216, 1997, pp. 185-191
Authors:
GIADDUI T
FORCEY KS
EARWAKER LG
LONI A
CANHAM LT
HALIMAOUI A
Citation: T. Giaddui et al., REDUCTION OF ION-BEAM-INDUCED AND ATMOSPHERIC AGING OF POROUS SILICONUSING AL AND SIO2 CAPS, Journal of physics. D, Applied physics, 29(6), 1996, pp. 1580-1586
Authors:
HALIMAOUI A
CAMPIDELLI Y
LARRE A
BENSAHEL D
Citation: A. Halimaoui et al., THERMALLY-INDUCED MODIFICATIONS IN THE POROUS SILICON PROPERTIES, Physica status solidi. b, Basic research, 190(1), 1995, pp. 35-40
Authors:
GOUDEAU P
NAUDON A
VEZIN V
HALIMAOUI A
BOMCHIL G
LAMBERT B
Citation: P. Goudeau et al., CORRELATION BETWEEN THE POROUS SILICON MORPHOLOGY AND THE PHOTOLUMINESCENCE EFFICIENCY - A SAXS STUDY, Physica status solidi. b, Basic research, 190(1), 1995, pp. 63-68
Authors:
NASSIOPOULOS AG
GRIGOROPOULOS S
CANHAM L
HALIMAOUI A
BERBEZIER I
GOGOLIDES E
PAPADIMITRIOU D
Citation: Ag. Nassiopoulos et al., SUBMICROMETER LUMINESCENT POROUS SILICON STRUCTURES USING LITHOGRAPHICALLY PATTERNED SUBSTRATES, Thin solid films, 255(1-2), 1995, pp. 329-333
Authors:
VOOS M
DELALANDE C
BENDAHAN M
WAINSTAIN J
TITKOV AN
HALIMAOUI A
Citation: M. Voos et al., EXCITATION SPECTROSCOPY OF THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON, Solid state communications, 94(8), 1995, pp. 651-654
Authors:
HALIMAOUI A
CAMPIDELLI Y
BADOZ PA
BENSAHEL D
Citation: A. Halimaoui et al., COVERING AND FILLING OF POROUS SILICON PORES WITH GE AND SI USING CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 78(5), 1995, pp. 3428-3430
Authors:
HALIMAOUI A
Citation: A. Halimaoui, DETERMINATION OF THE SPECIFIC SURFACE-AREA OF POROUS SILICON FROM ITSETCH RATE IN HF SOLUTIONS, Surface science, 306(1-2), 1994, pp. 120000550-120000554
Authors:
GREGORA I
CHAMPAGNON B
HALIMAOUI A
Citation: I. Gregora et al., RAMAN INVESTIGATION OF LIGHT-EMITTING POROUS SILICON LAYERS - ESTIMATE OF CHARACTERISTIC CRYSTALLITE DIMENSIONS, Journal of applied physics, 75(6), 1994, pp. 3034-3039
Authors:
NAUDON A
GOUDEAU P
HALIMAOUI A
LAMBERT B
BOMCHIL G
Citation: A. Naudon et al., SMALL-ANGLE X-RAY-SCATTERING STUDY OF ANODICALLY OXIDIZED POROUS SILICON LAYERS, Journal of applied physics, 75(2), 1994, pp. 780-784
Authors:
LARRE A
HALIMAOUI A
GLOWACKI F
FERRIEU F
CAMPIDELLI Y
BENSAHEL D
Citation: A. Larre et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY OF POROUS SILICON LAYERS ANNEALED UNDER ULTRAHIGH-VACUUM, Applied physics letters, 65(12), 1994, pp. 1566-1568
Authors:
NAUDON A
GOUDEAU P
HALIMAOUI A
BOMCHIL G
Citation: A. Naudon et al., SMALL-ANGLE X-RAY-SCATTERING STUDY OF THE MICROSTRUCTURE OF HIGHLY POROUS SILICON, Journal de physique. IV, 3(C8), 1993, pp. 349-352
Authors:
DUMAS P
GU M
SYRYKH C
GIMZEWSKI JK
MAKARENKO I
HALIMAOUI A
SALVAN F
Citation: P. Dumas et al., DIRECT OBSERVATION OF INDIVIDUAL NANOMETER-SIZED LIGHT-EMITTING STRUCTURES ON POROUS SILICON SURFACES, Europhysics letters, 23(3), 1993, pp. 197-202
Authors:
GREGORA I
CHAMPAGNON B
HALIMAOUI A
Citation: I. Gregora et al., NANOCRYSTALLITES IN LUMINESCENT POROUS SILICON CHARACTERIZED BY RAMAN-SCATTERING, Journal of luminescence, 57(1-6), 1993, pp. 73-76
Authors:
GOUDEAU P
NAUDON A
HALIMAOUI A
BOMCHIL G
Citation: P. Goudeau et al., SAXS STUDY OF THE INFLUENCE OF THE POROUS SILICON MORPHOLOGY ON THE PHOTOLUMINESCENCE EFFICIENCY, Journal of luminescence, 57(1-6), 1993, pp. 141-145
Authors:
VINCENT G
LEBLANC F
SAGNES I
BADOZ PA
HALIMAOUI A
Citation: G. Vincent et al., INVESTIGATION OF OPTICAL-PROPERTIES OF FREESTANDING POROUS SILICON FILMS BY ABSORPTION AND MIRAGE EFFECT, Journal of luminescence, 57(1-6), 1993, pp. 217-221
Authors:
GU M
SYRYKH C
HALIMAOUI A
DUMAS P
SALVAN F
Citation: M. Gu et al., LOW-ENERGY SCANNING CATHODOLUMINESCENCE SPECTROSCOPY AND MICROSCOPY OF POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 315-319
Authors:
BERBEZIER I
HALIMAOUI A
Citation: I. Berbezier et A. Halimaoui, A MICROSTRUCTURAL STUDY OF POROUS SILICON, Journal of applied physics, 74(9), 1993, pp. 5421-5425
Authors:
HALIMAOUI A
Citation: A. Halimaoui, INFLUENCE OF WETTABILITY ON ANODIC BIAS INDUCED ELECTROLUMINESCENCE IN POROUS SILICON, Applied physics letters, 63(9), 1993, pp. 1264-1266
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1-24
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