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Results: 1-14 |
Results: 14
POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES
Authors: GEORGAKILAS A MICHELAKIS K HALKIAS G BECOURT N PEIRO F CORNET A
Citation: A. Georgakilas et al., POTENTIAL USE OF THE TENDENCY OF III-V ALLOYS TO SEPARATE FOR FABRICATION OF LOW DIMENSIONALITY STRUCTURES, Microelectronic engineering, 42, 1998, pp. 583-586
DEVICE PARAMETER OPTIMIZATION OF STRAINED SI CHANNEL SIGE SI N-MODFETS USING A ONE-DIMENSIONAL CHARGE CONTROL MODEL/
Authors: HALKIAS G VEGIRI A
Citation: G. Halkias et A. Vegiri, DEVICE PARAMETER OPTIMIZATION OF STRAINED SI CHANNEL SIGE SI N-MODFETS USING A ONE-DIMENSIONAL CHARGE CONTROL MODEL/, I.E.E.E. transactions on electron devices, 45(12), 1998, pp. 2430-2436
SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE
Authors: PEIRO F CORNET A MORANTE JR HALKIAS G GEORGAKILAS A
Citation: F. Peiro et al., SELF-ORGANIZATION OF QUANTUM WIRE-LIKE MORPHOLOGY ON INXGA1-XAS SINGLE QUANTUM-WELLS GROWN ON (100)INP VICINAL SURFACES DEPENDING ON THE SUBSTRATE MISORIENTATION, BUFFER MISMATCH AND GROWTH TEMPERATURE, Microelectronics, 28(8-10), 1997, pp. 865-873
STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/
Authors: VILA A CORNET A MORANTE JR GEORGAKILAS A HALKIAS G BECOURT N
Citation: A. Vila et al., STRUCTURAL CHARACTERIZATION OF INGAAS INALAS QUANTUM-WELLS GROWN ON (111)-INP SUBSTRATES/, Microelectronics, 28(8-10), 1997, pp. 999-1003
SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES
Authors: BECOURT N PEIRO F CORNET A MORANTE JR GOROSTIZA P HALKIAS G MICHELAKIS K GEORGAKILAS A
Citation: N. Becourt et al., SURFACE STEP BUNCHING AND CRYSTAL DEFECTS IN INALAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY ON (111)B INP SUBSTRATES, Applied physics letters, 71(20), 1997, pp. 2961-2963
HETEROJUNCTION DIODES NGAAS PSI WITH IDEAL CHARACTERISTICS/
Authors: APERATHITIS E KAYIAMBAKI M FOUKARAKI V HALKIAS G PANAYOTATOS P GEORGAKILAS A
Citation: E. Aperathitis et al., HETEROJUNCTION DIODES NGAAS PSI WITH IDEAL CHARACTERISTICS/, Applied surface science, 102, 1996, pp. 208-211
ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/
Authors: DIMOULAS A DAVIDOW J GIAPIS KP GEORGAKILAS A HALKIAS G KORNELIOS N
Citation: A. Dimoulas et al., ELECTRON-DENSITY EFFECTS IN THE MODULATION SPECTROSCOPY OF STRAINED AND LATTICE-MATCHED INGAAS INALAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORSTRUCTURES/, Journal of applied physics, 80(6), 1996, pp. 3484-3487
MODELING OF CURRENT-VOLTAGE CHARACTERISTICS FOR STRAINED AND LATTICE-MATCHED HEMTS ON INP SUBSTRATE USING A VARIATIONAL CHARGE CONTROL MODEL
Authors: GUAN L CHRISTOU A HALKIAS G BARBE DF
Citation: L. Guan et al., MODELING OF CURRENT-VOLTAGE CHARACTERISTICS FOR STRAINED AND LATTICE-MATCHED HEMTS ON INP SUBSTRATE USING A VARIATIONAL CHARGE CONTROL MODEL, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 612-617
PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY
Authors: KALBOUSSI A MARRAKCHI G TABATA A GUILLOT G HALKIAS G ZEKENTES K GEORGAKILAS A CRISTOU A
Citation: A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96
ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES
Authors: MONEGER S TABATA A BRU C GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS A POWERFUL TOOL TO CHARACTERIZE THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 177-180
MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY
Authors: ZEKENTES K HALKIAS G DIMOULAS A TABATA A BENYATTOU T GUILLOT G MORANTE JR PEIRO F CORNET A GEORGAKILAS A CHRISTOU A
Citation: K. Zekentes et al., MATERIALS PROBLEMS FOR THE DEVELOPMENT OF INGAAS INALAS HEMT TECHNOLOGY, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 21-25
PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS
Authors: MONEGER S BALTAGI Y BENYATTOU T TABATA A RAGOT B GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., PHOTOREFLECTANCE STUDIES OF LATTICE-MATCHED AND STRAINED INGAAS INALAS SINGLE QUANTUM-WELLS, Journal of applied physics, 74(2), 1993, pp. 1437-1439
A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/
Authors: GEORGAKILAS A HALKIAS G CHRISTOU A KORNILIOS N PAPAVASSILIOU C ZEKENTES K KONSTANTINIDIS G PEIRO F CORNET A ABABOU S TABATA A GUILLOT G
Citation: A. Georgakilas et al., A COMPREHENSIVE OPTIMIZATION OF INAIAS MOLECULAR-BEAM EPITAXY FOR INGAAS INAIAS HEMT TECHNOLOGY/, Journal of the Electrochemical Society, 140(5), 1993, pp. 1503-1509
ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES
Authors: MONEGER S TABATA A BRU C GUILLOT G GEORGAKILAS A ZEKENTES K HALKIAS G
Citation: S. Moneger et al., ROOM-TEMPERATURE PHOTOREFLECTANCE AS AN EFFICIENT TOOL FOR STUDY OF THE CRYSTALLINE QUALITY OF INALAS LAYERS GROWN ON INP SUBSTRATES, Applied physics letters, 63(12), 1993, pp. 1654-1656
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