Authors:
ITOH KM
MUTO J
WALUKIEWICZ W
BEEMAN JW
HALLER EE
KIM HJ
MAYUR AJ
SCIACCA MD
RAMDAS AK
BUCZKO R
FARMER JW
Citation: Km. Itoh et al., EVIDENCE FOR CORRELATED HOLE DISTRIBUTION IN NEUTRON-TRANSMUTATION-DOPED ISOTOPICALLY CONTROLLED GERMANIUM, Physical review. B, Condensed matter, 53(12), 1996, pp. 7797-7804
Authors:
ITOH KM
HALLER EE
BEEMAN JW
HANSEN WL
EMES J
REICHERTZ LA
KREYSA E
SHUTT T
CUMMINGS A
STOCKWELL W
SADOULET B
MUTO J
FARMER JW
OZHOGIN VI
Citation: Km. Itoh et al., HOPPING CONDUCTION AND METAL-INSULATOR-TRANSITION IN ISOTOPICALLY ENRICHED NEUTRON-TRANSMUTATION-DOPED GE-70-GA, Physical review letters, 77(19), 1996, pp. 4058-4061
Authors:
SIRMAIN G
DUBON OD
HANSEN WL
OLSEN CS
HALLER EE
Citation: G. Sirmain et al., A COPPER-RELATED ACCEPTOR COMPLEX IN VACUUM GROWN GERMANIUM-CRYSTALS, Journal of applied physics, 79(1), 1996, pp. 209-213
Authors:
WALUKIEWICZ W
LILIENTALWEBER Z
JASINSKI J
ALMONTE M
PRASAD A
HALLER EE
WEBER ER
GRENIER P
WHITAKER JF
Citation: W. Walukiewicz et al., HIGH-RESISTIVITY AND ULTRAFAST CARRIER LIFETIME IN ARGON IMPLANTED GAAS, Applied physics letters, 69(17), 1996, pp. 2569-2571
Authors:
BRUNDERMANN E
LINHART AM
REICHERTZ L
ROSER HP
DUBON OD
HANSEN WL
SIRMAIN G
HALLER EE
Citation: E. Brundermann et al., DOUBLE ACCEPTOR-DOPED GE - A NEW MEDIUM FOR INTER-VALENCE-BAND LASERS, Applied physics letters, 68(22), 1996, pp. 3075-3077
Citation: C. Wetzel et al., INFRARED REFLECTION OF GAN AND ALGAN THIN-FILM HETEROSTRUCTURES WITH ALN BUFFER LAYERS, Applied physics letters, 68(18), 1996, pp. 2547-2549
Citation: As. Nickles et al., LASER ABLATION-DEPOSITED PZT THIN-FILMS FOR PIEZOELECTRIC MICROSENSORS AND MICROACTUATORS, Integrated ferroelectrics, 10(1-4), 1995, pp. 89-98
Authors:
WIETFELDT FE
NORMAN EB
CHAN YD
DACRUZ MTF
GARCIA A
HALLER EE
HANSEN WL
HINDI MM
LARIMER RM
LESKO KT
LUKE PN
STOKSTAD RG
SUR B
ZLIMEN I
Citation: Fe. Wietfeldt et al., FURTHER-STUDIES ON THE EVIDENCE FOR A 17-KEV NEUTRINO IN A C-14 DOPEDGERMANIUM DETECTOR, Physical review. C. Nuclear physics, 52(2), 1995, pp. 1028-1040
Citation: Od. Dubon et al., DEPENDENCE OF THE HOLE LIFETIME ON UNIAXIAL-STRESS IN GA-DOPED GE, Physical review. B, Condensed matter, 51(11), 1995, pp. 7349-7352
Citation: Ee. Haller et Ak. Ramdas, SLCS94 - 6TH INTERNATIONAL-CONFERENCE ON SHALLOW LEVEL CENTERS IN SEMICONDUCTORS - UC-BERKELEY, AUGUST 10-12, 1994 - PREFACE, Solid state communications, 93(5), 1995, pp. 341-346
Citation: I. Wilke et al., SPECTROSCOPY OF THE HOLE POPULATION IN BOUND EXCITED ACCEPTOR STATES DURING RECOMBINATION IN P-TYPE GE, Solid state communications, 93(5), 1995, pp. 409-414
Authors:
HARADA Y
FUJII K
OHYAMA T
HALLER EE
ITOH K
Citation: Y. Harada et al., STARK-BROADENING BY INHOMOGENEOUS ELECTRIC-FIELD IN COMPENSATED GERMANIUM, Solid state communications, 93(5), 1995, pp. 455-455
Authors:
ITOH KM
WALUKIEWICZ W
BEEMAN JW
HALLER EE
FARMER JW
OZHOGIN VI
Citation: Km. Itoh et al., COMPENSATION DEPENDENCE OF GA IMPURITY ABSORPTION-SPECTRA IN HIGHLY COMPENSATED GE-GA,AS, Solid state communications, 93(5), 1995, pp. 456-456