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Results: 1-10 |
Results: 10
ANALYSIS OF CARRIER MOBILITY AND CONCENTRATION IN SI-DOPED GAN GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY
Authors: TANG H KIM W BOTCHKAREV A POPOVICI G HAMDANI F MORKOC H
Citation: H. Tang et al., ANALYSIS OF CARRIER MOBILITY AND CONCENTRATION IN SI-DOPED GAN GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY, Solid-state electronics, 42(5), 1998, pp. 839-847
IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OF ALN GROWTH BY NITRIDATIONOF (0001)ALPHA-AL2O3
Authors: YEADON M MARSHALL MT HAMDANI F PEKIN S MORKOC H GIBSON JM
Citation: M. Yeadon et al., IN-SITU TRANSMISSION ELECTRON-MICROSCOPY OF ALN GROWTH BY NITRIDATIONOF (0001)ALPHA-AL2O3, Journal of applied physics, 83(5), 1998, pp. 2847-2850
MICROSTRUCTURE AND OPTICAL-PROPERTIES OF EPITAXIAL GAN ON ZNO(0001) GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY
Authors: HAMDANI F YEADON M SMITH DJ TANG H KIM W SALVADOR A BOTCHKAREV AE GIBSON JM POLYAKOV AY SKOWRONSKI M MORKOC H
Citation: F. Hamdani et al., MICROSTRUCTURE AND OPTICAL-PROPERTIES OF EPITAXIAL GAN ON ZNO(0001) GROWN BY REACTIVE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(2), 1998, pp. 983-990
EFFECT OF BUFFER LAYER AND SUBSTRATE SURFACE POLARITY ON THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAN ON ZNO
Authors: HAMDANI F BOTCHKAREV AE TANG H KIM W MORKOC H
Citation: F. Hamdani et al., EFFECT OF BUFFER LAYER AND SUBSTRATE SURFACE POLARITY ON THE GROWTH BY MOLECULAR-BEAM EPITAXY OF GAN ON ZNO, Applied physics letters, 71(21), 1997, pp. 3111-3113
OPTICAL-PROPERTIES OF GAN GROWN ON ZNO BY REACTIVE MOLECULAR-BEAM EPITAXY
Authors: HAMDANI F BOTCHKAREV A KIM W MORKOC H YEADON M GIBSON JM TSEN SCY SMITH DJ EVANS K LITTON CW MITCHEL WC HEMENGER P
Citation: F. Hamdani et al., OPTICAL-PROPERTIES OF GAN GROWN ON ZNO BY REACTIVE MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(4), 1997, pp. 467-469
SURFACE-MORPHOLOGY AND OPTICAL CHARACTERIZATION OF GAN GROWN ON ALPHA-AL2O3(0001) BY RADIO-FREQUENCY-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: YEADON M HAMDANI F XU GY SALVADOR A BOTCHKAREV AE GIBSON JM MORKOC H
Citation: M. Yeadon et al., SURFACE-MORPHOLOGY AND OPTICAL CHARACTERIZATION OF GAN GROWN ON ALPHA-AL2O3(0001) BY RADIO-FREQUENCY-ASSISTED MOLECULAR-BEAM EPITAXY, Applied physics letters, 70(22), 1997, pp. 3023-3025
OSCILLATOR-STRENGTHS FOR OPTICAL BAND-TO-BAND PROCESSES IN GAN EPILAYERS
Authors: GIL B HAMDANI F MORKOC H
Citation: B. Gil et al., OSCILLATOR-STRENGTHS FOR OPTICAL BAND-TO-BAND PROCESSES IN GAN EPILAYERS, Physical review. B, Condensed matter, 54(11), 1996, pp. 7678-7681
PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001)
Authors: STOEHR M AUBEL D JUILLAGUET S BISCHOFF JL KUBLER L BOLMONT D HAMDANI F FRAISSE B FOURCADE R
Citation: M. Stoehr et al., PHONON STRAIN-SHIFT COEFFICIENTS OF SI1-XGEX GROWN ON GE(001), Physical review. B, Condensed matter, 53(11), 1996, pp. 6923-6926
DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: STOEHR M MAURIN M HAMDANI F LASCARAY JP BARBUSSE D FRAISSE B FOURCADE R ABRAHAM P MONTEIL Y
Citation: M. Stoehr et al., DETERMINATION OF RESIDUAL STRAIN BY REFLECTIVITY, X-RAY-DIFFRACTION AND RAMAN-SPECTROSCOPY IN ZNSE EPILAYERS GROWN ON GAAS(001), INP(001) AND GASB(001) BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 257-261
BIAXIAL-STRAIN EFFECT ON EXCITONIC TRANSITIONS E(0) AND E(0)-RANGE 4.5-200 K AND ZEEMAN SPLITTING IN ZNSE(DELTA(0) IN THE TEMPERATURE)GAAS EPILAYERS/
Authors: COQUILLAT D HAMDANI F LASCARAY JP BRIOT O BRIOT N AULOMBARD RL
Citation: D. Coquillat et al., BIAXIAL-STRAIN EFFECT ON EXCITONIC TRANSITIONS E(0) AND E(0)-RANGE 4.5-200 K AND ZEEMAN SPLITTING IN ZNSE(DELTA(0) IN THE TEMPERATURE)GAAS EPILAYERS/, Physical review. B, Condensed matter, 47(16), 1993, pp. 10489-10496
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