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Results: 1-10 |
Results: 10
MODELING OF OUTPUT RESISTANCE IN SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SIGNIFICANT NEUTRAL BASE RECOMBINATION
Authors: HAMEL JS ALISON RJ BLAIKIE RJ
Citation: Js. Hamel et al., MODELING OF OUTPUT RESISTANCE IN SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SIGNIFICANT NEUTRAL BASE RECOMBINATION, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 693-699
SEPARATING THE INFLUENCES OF NEUTRAL BASE RECOMBINATION AND AVALANCHEBREAKDOWN ON BASE CURRENT REDUCTION IN SIGE HBTS
Authors: HAMEL JS
Citation: Js. Hamel, SEPARATING THE INFLUENCES OF NEUTRAL BASE RECOMBINATION AND AVALANCHEBREAKDOWN ON BASE CURRENT REDUCTION IN SIGE HBTS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 901-903
EXPERIMENTAL-METHOD TO EXTRACT AC COLLECTOR-BASE RESISTANCE FROM SIGEHBTS
Authors: HAMEL JS ALISON RJ BLAIKIE RJ
Citation: Js. Hamel et al., EXPERIMENTAL-METHOD TO EXTRACT AC COLLECTOR-BASE RESISTANCE FROM SIGEHBTS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 1944-1950
AN ACCURATE CHARGE CONTROL APPROACH FOR MODELING EXCESS PHASE-SHIFT IN THE BASE REGION OF BIPOLAR-TRANSISTORS
Authors: HAMEL JS
Citation: Js. Hamel, AN ACCURATE CHARGE CONTROL APPROACH FOR MODELING EXCESS PHASE-SHIFT IN THE BASE REGION OF BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1092-1098
SIMPLIFIED ANALYTICAL QUASI-TRANSPARENT SOLUTION FOR MINORITY-CARRIERTRANSPORT IN NONUNIFORMLY DOPED QUASI-NEUTRAL SEMICONDUCTOR REGIONS
Authors: HAMEL JS
Citation: Js. Hamel, SIMPLIFIED ANALYTICAL QUASI-TRANSPARENT SOLUTION FOR MINORITY-CARRIERTRANSPORT IN NONUNIFORMLY DOPED QUASI-NEUTRAL SEMICONDUCTOR REGIONS, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 104-109
COMPACT MODELING OF THE INFLUENCE OF EMITTER STORED CHARGE ON THE HIGH-FREQUENCY SMALL-SIGNAL AC RESPONSE OF BIPOLAR-TRANSISTORS USING QUASI-STATIC PARAMETERS
Authors: HAMEL JS
Citation: Js. Hamel, COMPACT MODELING OF THE INFLUENCE OF EMITTER STORED CHARGE ON THE HIGH-FREQUENCY SMALL-SIGNAL AC RESPONSE OF BIPOLAR-TRANSISTORS USING QUASI-STATIC PARAMETERS, IEEE journal of solid-state circuits, 31(1), 1996, pp. 106-113
NON-QUASI-STATIC MODELING OF NEUTRAL REGION AC PHOTO CURRENTS IN INTEGRATED PHOTODIODE DETECTORS
Authors: HAMEL JS
Citation: Js. Hamel, NON-QUASI-STATIC MODELING OF NEUTRAL REGION AC PHOTO CURRENTS IN INTEGRATED PHOTODIODE DETECTORS, Solid-state electronics, 37(3), 1994, pp. 473-479
A COMMENT ON THE GTCC STORED CHARGE MODEL - REPLY
Authors: HAMEL JS SELVAKUMAR CR
Citation: Js. Hamel et Cr. Selvakumar, A COMMENT ON THE GTCC STORED CHARGE MODEL - REPLY, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 868-869
TRANSIENT BASE DYNAMICS OF BIPOLAR-TRANSISTORS IN HIGH INJECTION
Authors: SEITCHIK JA HAMEL JS
Citation: Ja. Seitchik et Js. Hamel, TRANSIENT BASE DYNAMICS OF BIPOLAR-TRANSISTORS IN HIGH INJECTION, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2385-2390
INTEGRAL RELATIONS FOR DETERMINING NON-QUASI-STATIC CHARGE PARTITIONING IN BIPOLAR-DEVICES FROM STATIC CHARGE-DISTRIBUTIONS
Authors: HAMEL JS
Citation: Js. Hamel, INTEGRAL RELATIONS FOR DETERMINING NON-QUASI-STATIC CHARGE PARTITIONING IN BIPOLAR-DEVICES FROM STATIC CHARGE-DISTRIBUTIONS, I.E.E.E. transactions on electron devices, 40(9), 1993, pp. 1713-1716
Risultati: 1-10 |