AAAAAA
Results: 26-50/67
Authors:
TANG YS
NI WX
TORRES CMS
HANSSON GV
Citation: Ys. Tang et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE STUDY OF SI-SI0.7GE0.3 QUANTUM DOTS, Applied surface science, 102, 1996, pp. 372-376
Authors:
FU Y
JOELSSON KB
GRAHN KJ
NI WX
HANSSON GV
WILLANDER M
Citation: Y. Fu et al., HALL FACTOR IN STRAINED P-TYPE DOPED SI1-XGEX ALLOY, Physical review. B, Condensed matter, 54(16), 1996, pp. 11317-11321
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
Citation: Ia. Buyanova et al., FERMI-EDGE SINGULARITY IN P-TYPE MODULATION-DOPED SIGE QUANTUM-WELLS, Physical review. B, Condensed matter, 53(4), 1996, pp. 1701-1704
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Ia. Buyanova et al., PHOTOLUMINESCENCE OF THE 2-DIMENSIONAL HOLE GAS IN P-TYPE DELTA-DOPEDSI LAYERS, Physical review. B, Condensed matter, 53(15), 1996, pp. 9587-9590
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Ia. Buyanova et al., OPTICAL-PROPERTIES OF BORON MODULATION-DOPED SIGE QUANTUM-WELLS AND SI THIN-FILMS, Solid-state electronics, 40(1-8), 1996, pp. 53-57
Authors:
RADAMSON HH
JOELSSON KB
NI WX
BIRCH J
SUNDGREN JE
HULTMAN L
HANSSON GV
Citation: Hh. Radamson et al., STRAIN CHARACTERIZATION OF GE1-XSIX AND HEAVILY B-DOPED GE LAYERS ON GE(001) BY 2-DIMENSIONAL RECIPROCAL SPACE MAPPING, Journal of crystal growth, 167(3-4), 1996, pp. 495-501
Authors:
CHEN WM
BUYANOVA IA
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Wm. Chen et al., NONRADIATIVE DEFECTS IN SI AND SIGE SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 68(9), 1996, pp. 1256-1258
Authors:
NUR O
WILLANDER M
TURAN R
SARDELA MR
HANSSON GV
Citation: O. Nur et al., METAL-SEMICONDUCTOR JUNCTIONS ON P-TYPE STRAINED SI1-XGEX LAYERS, Applied physics letters, 68(8), 1996, pp. 1084-1086
Authors:
NI WX
HANSSON GV
BUYANOVA IA
HENRY A
CHEN WM
MOMEMAR B
Citation: Wx. Ni et al., INFLUENCE OF ION-BOMBARDMENT ON SI AND SIGE FILMS DURING MOLECULAR-BEAM EPITAXY GROWTH, Applied physics letters, 68(2), 1996, pp. 238-240
Authors:
HANSSON GV
RADAMSSON HH
NI WX
Citation: Gv. Hansson et al., STRAIN AND RELAXATION IN SI-MBE STRUCTURES STUDIED BY RECIPROCAL SPACE MAPPING USING HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 292-297
Authors:
SARDELA MR
HANSSON GV
Citation: Mr. Sardela et Gv. Hansson, THERMAL RELAXATION KINETICS OF STRAINED SI SI1-XGEX HETEROSTRUCTURES DETERMINED BY DIRECT MEASUREMENT OF MOSAICITY AND LATTICE-PARAMETER VARIATIONS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(2), 1995, pp. 314-326
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Ia. Buyanova et al., EFFECT OF ION-BOMBARDMENT ON DEEP PHOTOLUMINESCENCE BANDS IN P-TYPE BORON-MODULATION-DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 52(16), 1995, pp. 12006-12012
Authors:
RADAMSON HH
JOELSSON KB
NI WX
HULTMAN L
HANSSON GV
Citation: Hh. Radamson et al., CHARACTERIZATION OF HIGHLY BORON-DOPED SI, SI1-XGEX AND GE LAYERS BY HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY, Journal of crystal growth, 157(1-4), 1995, pp. 80-84
Authors:
NI WX
CHEN WM
BUYANOVA IA
HENRY A
HANSSON GV
MONEMAR B
Citation: Wx. Ni et al., SOME CRITICAL ISSUES ON GROWTH OF HIGH-QUALITY SI AND SIGE FILMS USING A SOLID-SOURCE MOLECULAR-BEAM EPITAXY SYSTEM, Journal of crystal growth, 157(1-4), 1995, pp. 242-247
Authors:
NI WX
EKBERG JO
JOELSSON KB
RADAMSON HH
HENRY A
SHEN GD
HANSSON GV
Citation: Wx. Ni et al., A SILICON MOLECULAR-BEAM EPITAXY SYSTEM DEDICATED TO DEVICE-ORIENTED MATERIAL RESEARCH, Journal of crystal growth, 157(1-4), 1995, pp. 285-294
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Ia. Buyanova et al., RADIATIVE RECOMBINATION PROCESSES IN P-TYPE MODULATION-DOPED SIGE QUANTUM-WELLS AND SI EPILAYERS, Journal of crystal growth, 157(1-4), 1995, pp. 362-366
Authors:
LARSSON MI
NI WX
HANSSON GV
Citation: Mi. Larsson et al., MANIPULATION OF NUCLEATION BY GROWTH-RATE MODULATION, Journal of applied physics, 78(6), 1995, pp. 3792-3796
Authors:
NUR O
WILLANDER M
HULTMAN L
RADAMSON HH
HANSSON GV
SARDELA MR
GREENE JE
Citation: O. Nur et al., COSI2 SI1-XGEX/SI(001) HETEROSTRUCTURES FORMED THROUGH DIFFERENT REACTION ROUTES - SILICIDATION-INDUCED STRAIN RELAXATION, DEFECT FORMATION, AND INTERLAYER DIFFUSION/, Journal of applied physics, 78(12), 1995, pp. 7063-7069
Authors:
SARDELA MR
TURAN R
WILLANDER M
HANSSON GV
HULTMAN L
Citation: Mr. Sardela et al., STRAIN DETERMINATION AND MICROSTRUCTURAL CHARACTERIZATION OF 50-KEV SN-ION-IMPLANTED SI(001), Journal of applied physics, 77(4), 1995, pp. 1411-1420
Authors:
TANG YS
NI WX
TORRES S
HANSSON GV
Citation: Ys. Tang et al., FABRICATION AND CHARACTERIZATION OF SI-SI0.7GE0.3 QUANTUM-DOT LIGHT-EMITTING-DIODES, Electronics Letters, 31(16), 1995, pp. 1385-1386
Authors:
GURDAL O
HASAN MA
SARDELA MR
GREENE JE
RADAMSON HH
SUNDGREN JE
HANSSON GV
Citation: O. Gurdal et al., GROWTH OF METASTABLE GE1-XSNX GE STRAINED-LAYER SUPERLATTICES ON GE(001)2X1 BY TEMPERATURE-MODULATED MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(7), 1995, pp. 956-958
Authors:
BUYANOVA IA
CHEN WM
HENRY A
NI WX
HANSSON GV
MONEMAR B
Citation: Ia. Buyanova et al., PROPERTIES OF DEEP PHOTOLUMINESCENCE BANDS IN SIGE SI QUANTUM STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(12), 1995, pp. 1642-1644
Authors:
SARDELA MR
RADAMSON HH
HULTMAN L
HANSSON GV
Citation: Mr. Sardela et al., GROWTH, CHARACTERIZATION AND DEVICE FABRICATION OF BORON DELTA-DOPED STRUCTURES BY SI-MOLECULAR BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2279-2281
Authors:
LARSSON MI
HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, MODELING AND APPLICATION OF SYNCHRONIZATION OF NUCLEATION BY MEANS OFINTERMITTENT RADIANT HEATING, JPN J A P 1, 33(4B), 1994, pp. 2282-2289
Authors:
SARDELA MR
RADAMSON HH
NI WX
SUNDGREN JE
HANSSON GV
Citation: Mr. Sardela et al., THERMAL-STABILITY CHARACTERIZATION OF DOPED LAYERS AND HETEROSTRUCTURES GROWN BY SI-MOLECULAR BEAM EPITAXY, JPN J A P 1, 33(4B), 1994, pp. 2381-2385