Citation: H. Happy et al., NUMERICAL-ANALYSIS OF DEVICE PERFORMANCE OF METAMORPHIC INYAL1-YAS INXGA1-XAS LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.6) HEMTS ON GAAS SUBSTRATE/, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2089-2095
Authors:
DANNEVILLE F
DAMBRINE G
HAPPY H
TADYSZAK P
CAPPY A
Citation: F. Danneville et al., INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS, Solid-state electronics, 38(5), 1995, pp. 1081-1087
Authors:
DANNEVILLE F
HAPPY H
DAMBRINE G
BELQUIN JM
CAPPY A
Citation: F. Danneville et al., MICROSCOPIC NOISE MODELING AND MACROSCOPIC NOISE MODELS - HOW GOOD A CONNECTION, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 779-786
Citation: G. Dambrine et al., A NEW METHOD FOR ON WAFER NOISE MEASUREMENT, IEEE transactions on microwave theory and techniques, 41(3), 1993, pp. 375-381