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Results:
1-14
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Results: 14
Authors:
HARAICHI S
WADA T
GORWADKAR SM
ISHII K
Citation: S. Haraichi et al., FABRICATION OF NANOMETER-SCALE VERTICAL METAL-INSULATOR-METAL TUNNEL-JUNCTIONS USING A SILICON-ON-INSULATOR SUBSTRATE, JPN J A P 1, 37(3B), 1998, pp. 1580-1583
Authors:
HARAICHI S
SASAKI F
Citation: S. Haraichi et F. Sasaki, SYMMETRY OF, AND POLARIZED-LASER-INDUCED REACTIONS ON, SI(111) CL2 SURFACES STUDIED BY 2ND-HARMONIC GENERATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3029-3033
Authors:
WADA T
HARAICHI S
ISHII K
HIROSHIMA H
KOMURO M
GORWADKAR SM
Citation: T. Wada et al., THE USE OF A SI-BASED RESIST SYSTEM AND TI ELECTRODE FOR THE FABRICATION OF SUB-10 NM METAL-INSULATOR-METAL TUNNEL-JUNCTIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1430-1434
Authors:
HARAICHI S
WADA T
GORWADKAR SM
ISHII K
HIROSHIMA H
Citation: S. Haraichi et al., ELECTRON-BEAM DOT LITHOGRAPHY FOR NANOMETER-SCALE TUNNEL-JUNCTIONS USING A DOUBLE-LAYERED INORGANIC RESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1406-1410
Authors:
HARAICHI S
SASAKI F
Citation: S. Haraichi et F. Sasaki, CHLORINE CHEMISORPTION AND REACTION ON THE SI(111) SURFACE AND ITS CHARACTERIZATION USING 2ND-HARMONIC GENERATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 871-874
Authors:
GORWADKAR SM
WADA T
HARAICHI S
HIROSHIMA H
ISHII K
KOMURO M
Citation: Sm. Gorwadkar et al., SIO2 C-SI BILAYER ELECTRON-BEAM RESIST PROCESS FOR NANO-FABRICATION/, JPN J A P 1, 35(12B), 1996, pp. 6673-6678
Authors:
WADA T
HARAICHI S
ISHII K
HIROSHIMA H
KOMURO M
HIRAYAMA M
Citation: T. Wada et al., SIO2 POLY-SI ELECTRON-BEAM RESIST PROCESS FOR NANOFABRICATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1850-1854
Authors:
KOMURO M
HIROSHIMA H
HARAICHI S
ISHII K
WADA T
OKAYAMA S
Citation: M. Komuro et al., ELECTRON-BEAM NANO-FABRICATION BY INORGANIC RESIST FOR MIM TUNNEL JUNCTION, Microelectronic engineering, 30(1-4), 1996, pp. 411-414
Authors:
WADA T
HIRAYAMA M
HARAICHI S
ISHII K
HIROSHIMA H
KOMURO M
Citation: T. Wada et al., SIO2 POLY-SI MULTILAYERED ELECTRON-BEAM RESIST PROCESS FOR FABRICATION OF ULTRASMALL TUNNEL-JUNCTIONS/, JPN J A P 1, 34(12B), 1995, pp. 6961-6965
Authors:
ITOH F
AZUMA J
HARAICHI S
SHIMASE A
Citation: F. Itoh et al., FOCUSED ION-BEAM-ASSISTED ETCHING OF ALUMINUM, International journal of the Japan Society for Precision Engineering, 29(3), 1995, pp. 211-216
Authors:
HARAICHI S
SASAKI F
KOBAYASHI S
KOMURO M
TANI T
Citation: S. Haraichi et al., OBSERVATION OF SURFACE SYMMETRY FOR SI XEF2 AND SI/CL-2 SYSTEM USING 2ND-HARMONIC GENERATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 745-749
Authors:
HARAICHI S
SASAKI F
KOBAYASHI S
KOMURO M
TANI T
Citation: S. Haraichi et al., OBSERVATION OF ETCHING REACTION FOR SI XEF2 SYSTEM USING 2ND-HARMONICGENERATION/, JPN J A P 1, 33(12B), 1994, pp. 7053-7056
Authors:
HARAICHI S
KOMURO M
Citation: S. Haraichi et M. Komuro, BROAD-PULSED GA ION-BEAM-ASSISTED ETCHING OF SI WITH CL2, JPN J A P 1, 32(12B), 1993, pp. 6168-6172
Authors:
ITOH F
SHIMASE A
HARAICHI S
TAKAHASHI T
Citation: F. Itoh et al., FOCUSED ION-BEAM MILLING TECHNOLOGY FOR ON-CHIP WIRING MODIFICATION SYSTEM FOR LSI, International journal of the Japan Society for Precision Engineering, 27(3), 1993, pp. 209-214
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