ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-39 |

Results: 26-39/39

INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE

Authors: COUTURIER J HARMAND JC VOISIN P

Citation: J. Couturier et al., INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE, Semiconductor science and technology, 10(6), 1995, pp. 881-885

CONTINUOUS MOLECULAR-BEAM EPITAXY OF ARSENIDES AND PHOSPHIDES APPLIEDTO DEVICE STRUCTURES ON INP SUBSTRATES

Authors: HARMAND JC PRASEUTH JP IDIARTALHOR E PALLA R PELOUARD JL QUILLEC M

Citation: Jc. Harmand et al., CONTINUOUS MOLECULAR-BEAM EPITAXY OF ARSENIDES AND PHOSPHIDES APPLIEDTO DEVICE STRUCTURES ON INP SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 1292-1296

DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY

Authors: LEGAY P ALEXANDRE F BENCHIMOL JL HARMAND JC

Citation: P. Legay et al., DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY, Journal of crystal growth, 150(1-4), 1995, pp. 394-398

ALASSB ALGAASSB BRAGG STACKS FOR 1.55-MU-M WAVELENGTH GROWN BY MOLECULAR-BEAM EPITAXY/

Authors: HARMAND JC JEANNES F LEROUX G JUHEL M

Citation: Jc. Harmand et al., ALASSB ALGAASSB BRAGG STACKS FOR 1.55-MU-M WAVELENGTH GROWN BY MOLECULAR-BEAM EPITAXY/, Electronics Letters, 31(19), 1995, pp. 1689-1690

HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATORBASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS

Authors: CHELLES S FERREIRA R VOISIN P HARMAND JC

Citation: S. Chelles et al., HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATORBASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS, Applied physics letters, 67(2), 1995, pp. 247-249

OBSERVATION OF WANNIER-STARK LADDERS IN GAINAS-ALGAINAS SEMICONDUCTORSUPERLATTICES

Authors: WANG G TRONC P DEPEYROT J HARMAND JC PALMIER JF KOCHERESHKO VP

Citation: G. Wang et al., OBSERVATION OF WANNIER-STARK LADDERS IN GAINAS-ALGAINAS SEMICONDUCTORSUPERLATTICES, Superlattices and microstructures, 16(4), 1994, pp. 321-326

MICROWAVE MINIBAND NDC IN GAINAS ALINAS SUPERLATTICES/

Authors: PALMIER JF HARMAND JC MINOT C LEPERSON H DUTISSEUIL E WANG H LEROUX G

Citation: Jf. Palmier et al., MICROWAVE MINIBAND NDC IN GAINAS ALINAS SUPERLATTICES/, Solid-state electronics, 37(4-6), 1994, pp. 697-700

DIRECT OPTICAL-INJECTION LOCKING OF 20-GHZ SUPERLATTICE OSCILLATORS

Authors: CADIOU JF GUENA J PENARD E LEGAUD P MINOT C PALMIER JF LEPERSON H HARMAND JC

Citation: Jf. Cadiou et al., DIRECT OPTICAL-INJECTION LOCKING OF 20-GHZ SUPERLATTICE OSCILLATORS, Electronics Letters, 30(20), 1994, pp. 1690-1691

LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE OPERATINGAT 1.5 MU-M

Authors: COUTURIER J VOISIN P HARMAND JC

Citation: J. Couturier et al., LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE OPERATINGAT 1.5 MU-M, Applied physics letters, 64(6), 1994, pp. 742-744

LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE

Authors: COUTURIER J HARMAND JC VOISIN P

Citation: J. Couturier et al., LOW-POWER ALL-OPTICAL BISTABILITY IN INGAAS-ALINAS SUPERLATTICES - DEMONSTRATION OF A WIRELESS SELF-ELECTRO-OPTICAL EFFECT DEVICE, Journal de physique. IV, 3(C5), 1993, pp. 253-256

OPTICALLY INDUCED EXCITONIC DISTRIBUTION IN GAINAS-ALGAINAS SEMICONDUCTOR SUPERLATTICES UNDER AN ELECTRIC-FIELD

Authors: WANG G TRONC P DEPEYROT J HARMAND JC PALMIER JF

Citation: G. Wang et al., OPTICALLY INDUCED EXCITONIC DISTRIBUTION IN GAINAS-ALGAINAS SEMICONDUCTOR SUPERLATTICES UNDER AN ELECTRIC-FIELD, Journal de physique. IV, 3(C5), 1993, pp. 273-276

THERMODYNAMIC ANALYSIS OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY AT THE SURFACE-STRUCTURE TRANSITION FROM 3X1 TO 4X2

Authors: CHATILLON C HARMAND JC ALEXANDRE F

Citation: C. Chatillon et al., THERMODYNAMIC ANALYSIS OF GAAS GROWTH BY MOLECULAR-BEAM EPITAXY AT THE SURFACE-STRUCTURE TRANSITION FROM 3X1 TO 4X2, Journal of crystal growth, 130(3-4), 1993, pp. 451-458

CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/

Authors: SYLVESTRE A CROZAT P ADDE R DELUSTRAC A JIN Y HARMAND JC QUILLEC M

Citation: A. Sylvestre et al., CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/, Electronics Letters, 29(24), 1993, pp. 2152-2154

DETERMINATION OF OXYGEN AND CARBON CONTAMINATIONS IN INGAAS MOLECULAR-BEAM EPITAXY USING GROWTH INTERRUPTIONS

Authors: HARMAND JC JUHEL M

Citation: Jc. Harmand et M. Juhel, DETERMINATION OF OXYGEN AND CARBON CONTAMINATIONS IN INGAAS MOLECULAR-BEAM EPITAXY USING GROWTH INTERRUPTIONS, Applied physics letters, 62(25), 1993, pp. 3300-3302

Risultati: 1-25 | 26-39 |