Authors: HARRINGTON WL MAGEE CW PAWLIK M DOWNEY DF OSBURN CM FELCH SB

Citation: Wl. Harrington et al., TECHNIQUES AND APPLICATIONS OF SECONDARY-ION MASS-SPECTROMETRY AND SPREADING RESISTANCE PROFILING TO MEASURE ULTRASHALLOW JUNCTION IMPLANTSDOWN TO 0.5 KEV B AND BF2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 286-291

Authors: FROST MR HARRINGTON WL DOWNEY DF WALTHER SR

Citation: Mr. Frost et al., SURFACE METAL CONTAMINATION DURING ION-IMPLANTATION - COMPARISON OF MEASUREMENTS BY SECONDARY-ION MASS-SPECTROSCOPY, TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, AND VAPOR-PHASE DECOMPOSITION USED IN CONJUNCTION WITH GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY AND INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 329-335