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Results:
1-12
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Results: 12
Authors:
APERATHITIS E
SCOTT CG
SANDS D
FOUKARAKI V
HATZOPOULOS Z
PANAYOTATOS P
Citation: E. Aperathitis et al., EFFECT OF TEMPERATURE ON GAAS ALGAAS MULTIPLE-QUANTUM-WELL SOLAR-CELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 85-89
Authors:
LAGADAS M
CALAMIOTOU M
ANDROULIDAKI M
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., LATTICE MISMATCH AND CONDUCTIVITY IN LTALGAAS LAYERS, Microelectronic engineering, 43-4, 1998, pp. 575-580
Authors:
LAGADAS M
ANDROULIDAKI M
HATZOPOULOS Z
CALAMIOTOU M
Citation: M. Lagadas et al., DEPENDENCE OF ARSENIC ANTISITE DEFECT CONCENTRATION AND 2-DIMENSIONALGROWTH MODE ON LT GAAS GROWTH-CONDITIONS, Microelectronic engineering, 43-4, 1998, pp. 581-586
Authors:
APERATHITIS E
HATZOPOULOS Z
ANDROULIDAKI M
FOUKARAKI V
KONDILIS A
SCOTT CG
SANDS D
PANAYOTATOS P
Citation: E. Aperathitis et al., RF-SPUTTERED INDIUM-TIN-OXIDE AS ANTIREFLECTIVE COATING FOR GAAS SOLAR-CELLS, Solar energy materials and solar cells, 45(2), 1997, pp. 161-168
Authors:
LAGADAS M
HATZOPOULOS Z
KORNILIOS N
ANDROULIDAKI M
CHRISTOU A
PANAYOTATOS P
Citation: M. Lagadas et al., ELECTRICAL-PROPERTIES OF N-GAAS EPILAYERS, FET AND HEMT STRUCTURES GROWN ON LT-GAAS BY MBE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 355-358
Authors:
FENG T
DIMOULAS A
CHRISTOU A
CONSTANTINIDIS G
HATZOPOULOS Z
Citation: T. Feng et al., FAILURE MECHANISMS OF GAAS-MESFETS WITH CU REFRACTORY METALLIZED GATES/, Microelectronics and reliability, 37(10-11), 1997, pp. 1699-1702
Authors:
ASHENFORD DE
DWEYDARI AW
SANDS D
SCOTT CG
YOUSAF M
APERATHITIS E
HATZOPOULOS Z
PANAYOTATOS P
Citation: De. Ashenford et al., INVESTIGATION OF P-I-N SOLAR-CELL EFFICIENCY ENHANCEMENT BY USE OF MQW STRUCTURES IN THE I-REGION, Journal of crystal growth, 159(1-4), 1996, pp. 920-924
Authors:
LAGADAS M
HATZOPOULOS Z
TSAGARAKI K
CALAMIOTOU M
LIOUTAS C
CHRISTOU A
Citation: M. Lagadas et al., THE EFFECT OF ARSENIC OVERPRESSURE ON THE STRUCTURAL-PROPERTIES GAAS GROWN AT LOW-TEMPERATURE, Journal of applied physics, 80(8), 1996, pp. 4377-4383
Authors:
ARPATZANIS N
PAPASTAMATIOU M
PAPAIOANNOU GJ
HATZOPOULOS Z
KONSTANDINIDES G
Citation: N. Arpatzanis et al., THE GAMMA-RAY RADIATION EFFECTS IN HIGH-ELECTRON-MOBILITY TRANSISTORS, Semiconductor science and technology, 10(11), 1995, pp. 1445-1451
Authors:
CALAMIOTOU M
RAPTIS YS
ANASTASSAKIS E
LAGADAS M
HATZOPOULOS Z
Citation: M. Calamiotou et al., XRD AND RAMAN STUDIES OF LOW-TEMPERATURE-GROWN GAAS EPILAYERS, Solid state communications, 87(6), 1993, pp. 563-566
Authors:
LAGADAS M
TSAGARAKI K
HATZOPOULOS Z
CHRISTOU A
Citation: M. Lagadas et al., INVESTIGATION OF LOW-TEMPERATURE (LT) LAYERS OF GAAS GROWN BY MBE - COMPARISON OF MESFET AND HEMT PERFORMANCE, Journal of crystal growth, 127(1-4), 1993, pp. 76-80
Authors:
DIMOULAS A
ZEKENTES K
ANDROULIDAKI M
KORNELIOS N
MICHELAKIS C
HATZOPOULOS Z
Citation: A. Dimoulas et al., DEGENERATE ELECTRON-GAS EFFECTS IN THE MODULATION SPECTROSCOPY OF PSEUDOMORPHIC AL0.32GA0.68AS IN0.15GA0.85AS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES/, Applied physics letters, 63(10), 1993, pp. 1417-1419
Risultati:
1-12
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