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Results: 1-11 |
Results: 11
INTRINSIC EXCITON-TRANSITIONS IN GAN
Authors: SHAN W FISCHER AJ HWANG SJ LITTLE BD HAUENSTEIN RJ XIE XC SONG JJ KIM SS GOLDENBERG B HORNING R KRISHNANKUTTY S PERRY WG BREMSER MD DAVIS RF
Citation: W. Shan et al., INTRINSIC EXCITON-TRANSITIONS IN GAN, Journal of applied physics, 83(1), 1998, pp. 455-461
LPE GROWTH OF CRACK-FREE PBSE LAYERS ON SI(100) USING MBE-GROWN PBSE BAF2/CAF2 BUFFER LAYERS/
Authors: STRECKER BN MCCANN PJ FANG XM HAUENSTEIN RJ OSTEEN M JOHNSON MB
Citation: Bn. Strecker et al., LPE GROWTH OF CRACK-FREE PBSE LAYERS ON SI(100) USING MBE-GROWN PBSE BAF2/CAF2 BUFFER LAYERS/, Journal of electronic materials, 26(5), 1997, pp. 444-448
NANOMETER-SCALE STUDIES OF NITRIDE ARSENIDE HETEROSTRUCTURES PRODUCEDBY NITROGEN PLASMA EXPOSURE OF GAAS/
Authors: GOLDMAN RS FEENSTRA RM BRINER BG OSTEEN ML HAUENSTEIN RJ
Citation: Rs. Goldman et al., NANOMETER-SCALE STUDIES OF NITRIDE ARSENIDE HETEROSTRUCTURES PRODUCEDBY NITROGEN PLASMA EXPOSURE OF GAAS/, Journal of electronic materials, 26(11), 1997, pp. 1342-1348
MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE NITROGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS HETEROSTRUCTURES - EXPERIMENTS AND KINETIC MODELING/
Authors: BANDIC ZZ MCGILL TC HAUENSTEIN RJ OSTEEN ML
Citation: Zz. Bandic et al., MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE NITROGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS HETEROSTRUCTURES - EXPERIMENTS AND KINETIC MODELING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2948-2951
STRAIN EFFECTS ON EXCITONIC TRANSITIONS IN GAN - DEFORMATION POTENTIALS
Authors: SHAN W HAUENSTEIN RJ FISCHER AJ SONG JJ PERRY WG BREMSER MD DAVIS RF GOLDENBERG B
Citation: W. Shan et al., STRAIN EFFECTS ON EXCITONIC TRANSITIONS IN GAN - DEFORMATION POTENTIALS, Physical review. B, Condensed matter, 54(19), 1996, pp. 13460-13463
ATOMIC-SCALE STRUCTURE AND ELECTRONIC-PROPERTIES OF GAN GAAS SUPERLATTICES/
Authors: GOLDMAN RS FEENSTRA RM BRINER BG OSTEEN ML HAUENSTEIN RJ
Citation: Rs. Goldman et al., ATOMIC-SCALE STRUCTURE AND ELECTRONIC-PROPERTIES OF GAN GAAS SUPERLATTICES/, Applied physics letters, 69(24), 1996, pp. 3698-3700
KINETIC MODELING OF MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS-BASED HETEROSTRUCTURES/
Authors: BANDIC ZZ HAUENSTEIN RJ OSTEEN ML MCGILL TC
Citation: Zz. Bandic et al., KINETIC MODELING OF MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS-BASED HETEROSTRUCTURES/, Applied physics letters, 68(11), 1996, pp. 1510-1512
PRESSURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF WURTZITE GAN
Authors: SHAN W SCHMIDT TJ HAUENSTEIN RJ SONG JJ GOLDENBERG B
Citation: W. Shan et al., PRESSURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF WURTZITE GAN, Applied physics letters, 66(25), 1995, pp. 3492-3494
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE
Authors: HAUENSTEIN RJ COLLINS DA CAI XP OSTEEN ML MCGILL TC
Citation: Rj. Hauenstein et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF NITROGEN PLASMA INTERACTIONS WITH A GAAS (100) SURFACE, Applied physics letters, 66(21), 1995, pp. 2861-2863
SCHOTTKY-BASED BAND LINEUPS FOR REFRACTORY SEMICONDUCTORS
Authors: WANG MW MCCALDIN JO SWENBERG JF MCGILL TC HAUENSTEIN RJ
Citation: Mw. Wang et al., SCHOTTKY-BASED BAND LINEUPS FOR REFRACTORY SEMICONDUCTORS, Applied physics letters, 66(15), 1995, pp. 1974-1976
PHOTOLUMINESCENCE OF ZINCBLENDE GAN UNDER HYDROSTATIC-PRESSURE
Authors: HWANG SJ SHAN W HAUENSTEIN RJ SONG JJ LIN ME STRITE S SVERDLOV BN MORKOC H
Citation: Sj. Hwang et al., PHOTOLUMINESCENCE OF ZINCBLENDE GAN UNDER HYDROSTATIC-PRESSURE, Applied physics letters, 64(22), 1994, pp. 2928-2930
Risultati: 1-11 |