Authors:
BASHIR R
NEUDECK GW
HAW Y
KVAM EP
DENTON JP
Citation: R. Bashir et al., CHARACTERIZATION OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OFSILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 923-927
Citation: R. Bashir et al., CHARACTERIZATION AND MODELING OF SIDEWALL DEFECTS IN SELECTIVE EPITAXIAL-GROWTH OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 928-935