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Results: 1-17 |
Results: 17
RELIABILITY IMPROVEMENT OF ALINAS GAINAS HIGH-ELECTRON-MOBILITY TRANSISTORS BY FLUORINE INCORPORATION CONTROL/
Authors: HAYAFUJI N YAMAMOTO Y ISHIDA T SATO K
Citation: N. Hayafuji et al., RELIABILITY IMPROVEMENT OF ALINAS GAINAS HIGH-ELECTRON-MOBILITY TRANSISTORS BY FLUORINE INCORPORATION CONTROL/, Journal of the Electrochemical Society, 145(8), 1998, pp. 2951-2954
MANUFACTURABILITY AND RELIABILITY OF INP HEMTS
Authors: SONODA T YAMAMOTO Y HAYAFUJI N YOSHIDA H SASAKI H KITANO T TAKAMIYA S OSTUBO M
Citation: T. Sonoda et al., MANUFACTURABILITY AND RELIABILITY OF INP HEMTS, Solid-state electronics, 41(10), 1997, pp. 1621-1628
SELECTIVE-AREA CHEMICAL BEAM EPITAXIAL REGROWTH OF SI-DOPED GAAS BY USING SILICON TETRAIODIDE FOR FIELD-EFFECT TRANSISTOR APPLICATION
Authors: IZUMI S YAMAMOTO Y KUNII T MIYAKUNI S HAYAFUJI N SATO K OTSUBO M
Citation: S. Izumi et al., SELECTIVE-AREA CHEMICAL BEAM EPITAXIAL REGROWTH OF SI-DOPED GAAS BY USING SILICON TETRAIODIDE FOR FIELD-EFFECT TRANSISTOR APPLICATION, Journal of crystal growth, 175, 1997, pp. 404-410
DONOR PASSIVATION IN N-ALINAS LAYERS BY FLUORINE
Authors: YAMAMOTO Y HAYAFUJI N FUJII N KADOIWA K YOSHIDA N SONODA T TAKAMIYA S
Citation: Y. Yamamoto et al., DONOR PASSIVATION IN N-ALINAS LAYERS BY FLUORINE, Journal of electronic materials, 25(4), 1996, pp. 685-690
DEGRADATION MECHANISM OF THE ALINAS GAINAS HIGH-ELECTRON-MOBILITY TRANSISTOR DUE TO FLUORINE INCORPORATION/
Authors: HAYAFUJI N YAMAMOTO Y ISHIDA T SATO K
Citation: N. Hayafuji et al., DEGRADATION MECHANISM OF THE ALINAS GAINAS HIGH-ELECTRON-MOBILITY TRANSISTOR DUE TO FLUORINE INCORPORATION/, Applied physics letters, 69(26), 1996, pp. 4075-4077
EVALUATION OF MOLECULAR-BEAM EPITAXIALLY GROWN ALGAAS GAAS HETEROJUNCTIONS FOR BIPOLAR-TRANSISTOR WITH INGAAS EMITTER CONTACT LAYER/
Authors: IZUMI S SAKAI M SHIMURA T HAYAFUJI N SATO K OTSUBO M
Citation: S. Izumi et al., EVALUATION OF MOLECULAR-BEAM EPITAXIALLY GROWN ALGAAS GAAS HETEROJUNCTIONS FOR BIPOLAR-TRANSISTOR WITH INGAAS EMITTER CONTACT LAYER/, Applied physics letters, 69(17), 1996, pp. 2516-2518
CHEMICAL BEAM EPITAXIAL-GROWTH OF SI-DOPED GAAS AND INP BY USING SILICON TETRAIODIDE
Authors: IZUMI S HAYAFUJI N ITO K SATO K OTSUBO M
Citation: S. Izumi et al., CHEMICAL BEAM EPITAXIAL-GROWTH OF SI-DOPED GAAS AND INP BY USING SILICON TETRAIODIDE, Applied physics letters, 68(22), 1996, pp. 3102-3104
OVERVIEW OF RECENT DEVELOPMENT OF HEMTS IN THE MM-WAVE RANGE
Authors: TAKAMIYA S YOSHIDA N HAYAFUJI N SONODA T MITSUI S
Citation: S. Takamiya et al., OVERVIEW OF RECENT DEVELOPMENT OF HEMTS IN THE MM-WAVE RANGE, Solid-state electronics, 38(9), 1995, pp. 1581-1588
QUANTITATIVE CORRELATION BETWEEN OXYGEN IMPURITY AND CURRENT GAIN-BETA OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: IZUMI S SAKAI M SHIMURA T TSUGAMI M HAYAFUJI N SONODA T TAKAMIYA S SUSAKI W MITSUI S
Citation: S. Izumi et al., QUANTITATIVE CORRELATION BETWEEN OXYGEN IMPURITY AND CURRENT GAIN-BETA OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 1287-1291
LESS-THAN-10 DEFECTS CM(2)CENTER-DOT-MU-M IN MOLECULAR-BEAM EPITAXY-GROWN GAAS BY ARSENIC CRACKING/
Authors: IZUMI S HAYAFUJI N SONODA T TAKAMIYA S MITSUI S
Citation: S. Izumi et al., LESS-THAN-10 DEFECTS CM(2)CENTER-DOT-MU-M IN MOLECULAR-BEAM EPITAXY-GROWN GAAS BY ARSENIC CRACKING/, Journal of crystal growth, 150(1-4), 1995, pp. 7-12
THERMAL-STABILITY OF ALINAS GAINAS/INP HETEROSTRUCTURES/
Authors: HAYAFUJI N YAMAMOTO Y YOSHIDA N SONODA T TAKAMIYA S MITSUI S
Citation: N. Hayafuji et al., THERMAL-STABILITY OF ALINAS GAINAS/INP HETEROSTRUCTURES/, Applied physics letters, 66(7), 1995, pp. 863-865
ATOMIC LAYER EPITAXY OF DEVICE-QUALITY ALGAAS AND ALAS
Authors: HAYAFUJI N ELDALLAL GM DIP A COLTER PC ELMASRY NA BEDAIR SM
Citation: N. Hayafuji et al., ATOMIC LAYER EPITAXY OF DEVICE-QUALITY ALGAAS AND ALAS, Applied surface science, 82-3, 1994, pp. 18-22
MECHANISM OF ZN PASSIVATION IN ALGAINP LAYER GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KADOIWA K KATO M MOTODA T ISHIDA T FUJII N HAYAFUJI N TSUGAMI M SONODA T TAKAMIYA S MITSUI S
Citation: K. Kadoiwa et al., MECHANISM OF ZN PASSIVATION IN ALGAINP LAYER GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 147-152
UNIFORM AND HIGH-POWER CHARACTERISTICS OF 780-NM ALGAAS TQW LASER-DIODES FABRICATED BY LARGE-SCALE MOCVD
Authors: SHIMA A MIYASHITA M MIURA T KADOWAKI T HAYAFUJI N AIGA M SUSAKI W
Citation: A. Shima et al., UNIFORM AND HIGH-POWER CHARACTERISTICS OF 780-NM ALGAAS TQW LASER-DIODES FABRICATED BY LARGE-SCALE MOCVD, IEEE journal of quantum electronics, 30(1), 1994, pp. 24-30
SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ALGAAS COMBINED WITH IN-SITU HCL-GAS ETCHING
Authors: KIZUKI H HAYAFUJI N FUJII N KANENO N MIHASHI Y MUROTANI T
Citation: H. Kizuki et al., SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ALGAAS COMBINED WITH IN-SITU HCL-GAS ETCHING, Journal of crystal growth, 134(1-2), 1993, pp. 35-42
LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGHLY RELIABLE 780 NM ALGAAS MULTIPLE-QUANTUM-WELL HIGH-POWER LASERS
Authors: MIHASHI Y MIYASHITA M HAYAFUJI N KANENO N KAGEYAMA S KARAKIDA S KIZUKI H SHIMA A MUROTANI T
Citation: Y. Mihashi et al., LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGHLY RELIABLE 780 NM ALGAAS MULTIPLE-QUANTUM-WELL HIGH-POWER LASERS, Journal of crystal growth, 133(3-4), 1993, pp. 281-288
ATOMIC LAYER EPITAXY OF GAAS WITH A 2-MU-M H GROWTH-RATE/
Authors: DIP A ELDALLAL GM COLTER PC HAYAFUJI N BEDAIR SM
Citation: A. Dip et al., ATOMIC LAYER EPITAXY OF GAAS WITH A 2-MU-M H GROWTH-RATE/, Applied physics letters, 62(19), 1993, pp. 2378-2380
Risultati: 1-17 |