Authors: HBIB H BONNAUD O LHERMITE H MENKASSI A

Citation: H. Hbib et al., DEEP LEVELS IN AU-POXNYINZ-(N)INP MIS STR UCTURES EVALUATED BY FTDLTSTECHNIQUE, Journal de physique. III, 7(2), 1997, pp. 351-367

Authors: HBIB H BONNAUD O

Citation: H. Hbib et O. Bonnaud, ELECTRICAL-CONDUCTION IN POXNYINZ FILMS DEPOSITED ON INP, Philosophical magazine letters, 75(2), 1997, pp. 111-115

Authors: HBIB H BONNAUD O FORTIN B

Citation: H. Hbib et al., ELECTRICAL CHARACTERISTICS OF (N)-INP MIS DIODES WITH A POXNY INTERFACIAL LAYER DEPOSITED AT LOW-TEMPERATURE, Semiconductor science and technology, 12(5), 1997, pp. 609-613

Authors: HBIB H BONNAUD O GAUNEAU M HAMEDI L MARCHAND R QUEMERAIS A

Citation: H. Hbib et al., CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES, Thin solid films, 310(1-2), 1997, pp. 1-7

Authors: HBIB H BONNAUD O QUEMERAIS A GAUNEAU M ADAM JL MARCHAND R

Citation: H. Hbib et al., PREPARATION AND CHARACTERIZATION OF PHOSP HORUS OXINITRIDE THIN-FILMSFOR INP PASSIVATION, Journal de physique. III, 6(11), 1996, pp. 1489-1506

Authors: HBIB H QUAN DT BONNAUD O MENKASSI A

Citation: H. Hbib et al., INTERFACIAL ELECTRICAL-PROPERTIES OF POXNYINZ N-INP/, Physica status solidi. a, Applied research, 155(2), 1996, pp. 5-7