Citation: H. Hbib et al., DEEP LEVELS IN AU-POXNYINZ-(N)INP MIS STR UCTURES EVALUATED BY FTDLTSTECHNIQUE, Journal de physique. III, 7(2), 1997, pp. 351-367
Citation: H. Hbib et al., ELECTRICAL CHARACTERISTICS OF (N)-INP MIS DIODES WITH A POXNY INTERFACIAL LAYER DEPOSITED AT LOW-TEMPERATURE, Semiconductor science and technology, 12(5), 1997, pp. 609-613
Authors:
HBIB H
BONNAUD O
GAUNEAU M
HAMEDI L
MARCHAND R
QUEMERAIS A
Citation: H. Hbib et al., CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES, Thin solid films, 310(1-2), 1997, pp. 1-7
Authors:
HBIB H
BONNAUD O
QUEMERAIS A
GAUNEAU M
ADAM JL
MARCHAND R
Citation: H. Hbib et al., PREPARATION AND CHARACTERIZATION OF PHOSP HORUS OXINITRIDE THIN-FILMSFOR INP PASSIVATION, Journal de physique. III, 6(11), 1996, pp. 1489-1506