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Results: 1-11 |
Results: 11
EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF IN2TE3 THIN-FILMS
Authors: HEGAB NA BEKHEET AE AFIFI MA ELSHAZLY AA
Citation: Na. Hegab et al., EFFECT OF ANNEALING ON THE OPTICAL-PROPERTIES OF IN2TE3 THIN-FILMS, Applied physics A: Materials science & processing, 66(2), 1998, pp. 235-240
THRESHOLD SWITCHING IN TE46-XAS32+XGE10SI12 CHALCOGENIDE GLASS SYSTEM
Authors: AFIFI MA HEGAB NA
Citation: Ma. Afifi et Na. Hegab, THRESHOLD SWITCHING IN TE46-XAS32+XGE10SI12 CHALCOGENIDE GLASS SYSTEM, Vacuum, 48(2), 1997, pp. 135-141
THE SWITCHING PHENOMENON IN AMORPHOUS IN2TE3 THIN-FILMS
Authors: AFIFI MA HEGAB NA BEKHEET AE
Citation: Ma. Afifi et al., THE SWITCHING PHENOMENON IN AMORPHOUS IN2TE3 THIN-FILMS, Vacuum, 47(3), 1996, pp. 265-269
SOME PHYSICAL-PROPERTIES OF THE BI-SB-SE SYSTEM
Authors: FADEL M SHARAF KM HEGAB NA
Citation: M. Fadel et al., SOME PHYSICAL-PROPERTIES OF THE BI-SB-SE SYSTEM, Indian Journal of Pure & Applied Physics, 34(10), 1996, pp. 810-814
CONDUCTION MECHANISM IN THE PRE-SWITCHING STATE OF THIN-FILMS CONTAINING TE AS GE SI
Authors: ELSAMANOUDY MM HEGAB NA FADEL M
Citation: Mm. Elsamanoudy et al., CONDUCTION MECHANISM IN THE PRE-SWITCHING STATE OF THIN-FILMS CONTAINING TE AS GE SI, Vacuum, 46(7), 1995, pp. 701-707
EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF IN2SE3 THIN-FILMS
Authors: AFIFI MA HEGAB NA BEKHEET AE
Citation: Ma. Afifi et al., EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF IN2SE3 THIN-FILMS, Vacuum, 46(4), 1995, pp. 335-339
SWITCHING EFFECTS IN SE90-XSBXBI10 THIN-FILMS
Authors: HEGAB NA FADEL M SHARAF KA
Citation: Na. Hegab et al., SWITCHING EFFECTS IN SE90-XSBXBI10 THIN-FILMS, Vacuum, 46(12), 1995, pp. 1351-1355
PREPARATION AND INVESTIGATION ON GLASSES IN THE TE46AS32GE10SI12 AND TE41AS37GE10SI12 SYSTEMS
Authors: HEGAB NA FADEL M ELSAMANOUDY MM
Citation: Na. Hegab et al., PREPARATION AND INVESTIGATION ON GLASSES IN THE TE46AS32GE10SI12 AND TE41AS37GE10SI12 SYSTEMS, Journal of Materials Science, 30(21), 1995, pp. 5461-5465
MEMORY SWITCHING CHARACTERISTICS OF IN2SE3 AMORPHOUS THIN-FILMS
Authors: AFIFI MA LABIB HH HEGAB NA FADEL M BEKHEET AE
Citation: Ma. Afifi et al., MEMORY SWITCHING CHARACTERISTICS OF IN2SE3 AMORPHOUS THIN-FILMS, Indian Journal of Pure & Applied Physics, 33(3), 1995, pp. 129-134
MEMORY SWITCHING PHENOMENA IN THIN-FILMS OF CHALCOGENIDE SEMICONDUCTORS
Authors: HEGAB NA FADEL M SEDEEK K
Citation: Na. Hegab et al., MEMORY SWITCHING PHENOMENA IN THIN-FILMS OF CHALCOGENIDE SEMICONDUCTORS, Vacuum, 45(4), 1994, pp. 459-462
MEMORY SWITCHING IN AMORPHOUS GE-SE-TL CHALCOGENIDE SEMICONDUCTOR-FILMS
Authors: KOTKATA MF AFIFI MA LABIB HH HEGAB NA ABDELAZIZ MM
Citation: Mf. Kotkata et al., MEMORY SWITCHING IN AMORPHOUS GE-SE-TL CHALCOGENIDE SEMICONDUCTOR-FILMS, Thin solid films, 240(1-2), 1994, pp. 143-146
Risultati: 1-11 |