AAAAAA

   
Results: 1-20 |
Results: 20

Authors: HEGGIE MI TERRONES M EGGEN BR JUNGNICKEL G JONES R LATHAM CD BRIDDON PR TERRONES H
Citation: Mi. Heggie et al., QUANTITATIVE DENSITY-FUNCTIONAL STUDY OF NESTED FULLERENES, Physical review. B, Condensed matter, 57(21), 1998, pp. 13339-13342

Authors: JUNGNICKEL G SITCH PK FRAUENHEIM T EGGEN BR HEGGIE MI LATHAM CD COUSINS CSG
Citation: G. Jungnickel et al., NITROGEN DOPING IN PURELY SP(2) BONDED FORMS OF CARBON, Physical review. B, Condensed matter, 57(2), 1998, pp. 661-665

Authors: SITCH PK JONES R OBERG S HEGGIE MI
Citation: Pk. Sitch et al., AN AB-INITIO STUDY OF THE 90-DEGREES PARTIAL DISLOCATION CORE IN DIAMOND, Journal de physique. III, 7(7), 1997, pp. 1381-1387

Authors: EGGEN BR HEGGIE MI JUNGNICKEL G LATHAM CD JONES R BRIDDON PR
Citation: Br. Eggen et al., CARBON-ATOMS CATALYZE FULLERENE GROWTH, Fullerene science and technology, 5(4), 1997, pp. 727-745

Authors: ELSNER J JONES R SITCH PK POREZAG VD ELSTNER M FRAUENHEIM T HEGGIE MI OBERG S BRIDDON PR
Citation: J. Elsner et al., THEORY OF THREADING EDGE AND SCREW DISLOCATIONS IN GAN, Physical review letters, 79(19), 1997, pp. 3672-3675

Authors: HEGGIE MI JUNGNICKEL G LATHAM CD
Citation: Mi. Heggie et al., THE THEORY OF CVD DIAMOND GROWTH, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 236-241

Authors: JUNGNICKEL G LATHAM CD HEGGIE MI FRAUENHEIM T
Citation: G. Jungnickel et al., ON THE GRAPHITIZATION OF DIAMOND SURFACES - THE IMPORTANCE OF TWINS, DIAMOND AND RELATED MATERIALS, 5(1), 1996, pp. 102-112

Authors: EGGEN BR LATHAM CD HEGGIE MI JONES B BRIDDON PR
Citation: Br. Eggen et al., ENERGETICS OF FULLERENE ISOMER TRANSFORMATION, Synthetic metals, 77(1-3), 1996, pp. 165-168

Authors: EGGEN BR HEGGIE MI JUNGNICKEL G LATHAM CD JONES R BRIDDON PR
Citation: Br. Eggen et al., AUTOCATALYSIS DURING FULLERENE GROWTH, Science, 272(5258), 1996, pp. 87-89

Authors: JUNGNICKEL G POREZAG D FRAUENHEIM T HEGGIE MI LAMBRECHT WRL SEGALL B ANGUS JC
Citation: G. Jungnickel et al., GRAPHITIZATION EFFECTS ON DIAMOND SURFACES AND THE DIAMOND GRAPHITE INTERFACE, Physica status solidi. a, Applied research, 154(1), 1996, pp. 109-125

Authors: HEGGIE MI LATHAM CD MAYNARD SCP JONES R
Citation: Mi. Heggie et al., COOPERATIVE POLARIZATION IN ICE I-H AND THE UNUSUAL STRENGTH OF THE HYDROGEN-BOND, Chemical physics letters, 249(5-6), 1996, pp. 485-490

Authors: LATHAM CD HEGGIE MI
Citation: Cd. Latham et Mi. Heggie, HYPOTHETICAL C-100 MOLECULE AND DIAMOND-GRAPHITE INTERFACE - UNSTABLEAND METASTABLE STATES OF CARBON, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 528-531

Authors: SITCH PK JONES R OBERG S HEGGIE MI
Citation: Pk. Sitch et al., AB-INITIO INVESTIGATION OF THE DISLOCATION-STRUCTURE AND ACTIVATION-ENERGY FOR DISLOCATION-MOTION IN SILICON-CARBIDE, Physical review. B, Condensed matter, 52(7), 1995, pp. 4951-4955

Authors: OBERG S SITCH PK JONES R HEGGIE MI
Citation: S. Oberg et al., FIRST-PRINCIPLES CALCULATIONS OF THE ENERGY BARRIER TO DISLOCATION-MOTION IN SI AND GAAS, Physical review. B, Condensed matter, 51(19), 1995, pp. 13138-13145

Authors: LATHAM CD HEGGIE MI JONES R BRIDDON PR
Citation: Cd. Latham et al., THE ENERGETICS OF HYDROGENIC REACTIONS AT DIAMOND SURFACES CALCULATEDBY A LOCAL SPIN-DENSITY FUNCTIONAL THEORETICAL METHOD, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1370-1374

Authors: HEGGIE MI LATHAM CD JONES R BRIDDON PR
Citation: Mi. Heggie et al., INSTABILITY OF TETRAHEDRAL BONDING FOR THE C-100 MOLECULE, Physical review. B, Condensed matter, 50(9), 1994, pp. 5937-5940

Authors: SITCH P JONES R OBERG S HEGGIE MI
Citation: P. Sitch et al., STRUCTURES OF DISLOCATIONS IN GAAS AND THEIR MODIFICATION BY IMPURITIES, Physical review. B, Condensed matter, 50(23), 1994, pp. 17717-17720

Authors: LATHAM CD HEGGIE MI JONES R
Citation: Cd. Latham et al., AB-INITIO ENERGETICS OF CVD GROWTH REACTIONS ON THE 3 LOW-INDEX SURFACES OF DIAMOND, DIAMOND AND RELATED MATERIALS, 2(12), 1993, pp. 1493-1499

Authors: JONES R UMERSKI A SITCH P HEGGIE MI OBERG S
Citation: R. Jones et al., DENSITY-FUNCTIONAL CALCULATIONS OF THE STRUCTURE AND PROPERTIES OF IMPURITIES AND DISLOCATIONS IN SEMICONDUCTORS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 369-381

Authors: HEGGIE MI JONES R UMERSKI A
Citation: Mi. Heggie et al., AB-INITIO TOTAL-ENERGY CALCULATIONS OF IMPURITY PINNING IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 383-387
Risultati: 1-20 |