Authors:
HEGGIE MI
TERRONES M
EGGEN BR
JUNGNICKEL G
JONES R
LATHAM CD
BRIDDON PR
TERRONES H
Citation: Mi. Heggie et al., QUANTITATIVE DENSITY-FUNCTIONAL STUDY OF NESTED FULLERENES, Physical review. B, Condensed matter, 57(21), 1998, pp. 13339-13342
Citation: Pk. Sitch et al., AN AB-INITIO STUDY OF THE 90-DEGREES PARTIAL DISLOCATION CORE IN DIAMOND, Journal de physique. III, 7(7), 1997, pp. 1381-1387
Authors:
JUNGNICKEL G
LATHAM CD
HEGGIE MI
FRAUENHEIM T
Citation: G. Jungnickel et al., ON THE GRAPHITIZATION OF DIAMOND SURFACES - THE IMPORTANCE OF TWINS, DIAMOND AND RELATED MATERIALS, 5(1), 1996, pp. 102-112
Authors:
JUNGNICKEL G
POREZAG D
FRAUENHEIM T
HEGGIE MI
LAMBRECHT WRL
SEGALL B
ANGUS JC
Citation: G. Jungnickel et al., GRAPHITIZATION EFFECTS ON DIAMOND SURFACES AND THE DIAMOND GRAPHITE INTERFACE, Physica status solidi. a, Applied research, 154(1), 1996, pp. 109-125
Citation: Mi. Heggie et al., COOPERATIVE POLARIZATION IN ICE I-H AND THE UNUSUAL STRENGTH OF THE HYDROGEN-BOND, Chemical physics letters, 249(5-6), 1996, pp. 485-490
Citation: Cd. Latham et Mi. Heggie, HYPOTHETICAL C-100 MOLECULE AND DIAMOND-GRAPHITE INTERFACE - UNSTABLEAND METASTABLE STATES OF CARBON, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 528-531
Citation: Pk. Sitch et al., AB-INITIO INVESTIGATION OF THE DISLOCATION-STRUCTURE AND ACTIVATION-ENERGY FOR DISLOCATION-MOTION IN SILICON-CARBIDE, Physical review. B, Condensed matter, 52(7), 1995, pp. 4951-4955
Citation: S. Oberg et al., FIRST-PRINCIPLES CALCULATIONS OF THE ENERGY BARRIER TO DISLOCATION-MOTION IN SI AND GAAS, Physical review. B, Condensed matter, 51(19), 1995, pp. 13138-13145
Citation: Cd. Latham et al., THE ENERGETICS OF HYDROGENIC REACTIONS AT DIAMOND SURFACES CALCULATEDBY A LOCAL SPIN-DENSITY FUNCTIONAL THEORETICAL METHOD, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1370-1374
Citation: Mi. Heggie et al., INSTABILITY OF TETRAHEDRAL BONDING FOR THE C-100 MOLECULE, Physical review. B, Condensed matter, 50(9), 1994, pp. 5937-5940
Citation: P. Sitch et al., STRUCTURES OF DISLOCATIONS IN GAAS AND THEIR MODIFICATION BY IMPURITIES, Physical review. B, Condensed matter, 50(23), 1994, pp. 17717-17720
Citation: Cd. Latham et al., AB-INITIO ENERGETICS OF CVD GROWTH REACTIONS ON THE 3 LOW-INDEX SURFACES OF DIAMOND, DIAMOND AND RELATED MATERIALS, 2(12), 1993, pp. 1493-1499
Authors:
JONES R
UMERSKI A
SITCH P
HEGGIE MI
OBERG S
Citation: R. Jones et al., DENSITY-FUNCTIONAL CALCULATIONS OF THE STRUCTURE AND PROPERTIES OF IMPURITIES AND DISLOCATIONS IN SEMICONDUCTORS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 369-381
Citation: Mi. Heggie et al., AB-INITIO TOTAL-ENERGY CALCULATIONS OF IMPURITY PINNING IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 383-387