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Results:
1-15
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Results: 15
Authors:
HEISER T
WEBER ER
Citation: T. Heiser et Er. Weber, TRANSIENT ION-DRIFT-INDUCED CAPACITANCE SIGNALS IN SEMICONDUCTORS, Physical review. B, Condensed matter, 58(7), 1998, pp. 3893-3903
Authors:
HIESLMAIR H
ISTRATOV AA
HEISER T
WEBER ER
Citation: H. Hieslmair et al., EVALUATION OF PRECIPITATE DENSITIES AND CAPTURE RADII FROM THE ANALYSIS OF PRECIPITATION KINETICS, Journal of applied physics, 84(2), 1998, pp. 713-717
Authors:
ISTRATOV AA
HEDEMANN H
SEIBT M
VYVENKO OF
SCHROTER W
HEISER T
FLINK C
HIESLMAIR H
WEBER ER
Citation: Aa. Istratov et al., ELECTRICAL AND RECOMBINATION PROPERTIES OF COPPER-SILICIDE PRECIPITATES IN SILICON, Journal of the Electrochemical Society, 145(11), 1998, pp. 3889-3898
Authors:
ISTRATOV AA
HIESLMAIR H
HEISER T
FLINK C
WEBER ER
Citation: Aa. Istratov et al., THE DISSOCIATION-ENERGY AND THE CHARGE-STATE OF A COPPER-PAIR CENTER IN SILICON, Applied physics letters, 72(4), 1998, pp. 474-476
Authors:
HIESLMAIR H
ISTRATOV AA
MCHUGO SA
FLINK C
HEISER T
WEBER ER
Citation: H. Hieslmair et al., GETTERING OF IRON BY OXYGEN PRECIPITATES, Applied physics letters, 72(12), 1998, pp. 1460-1462
Authors:
STAVREV M
FISCHER D
WENZEL C
HEISER T
Citation: M. Stavrev et al., STUDY OF TA(N,O) DIFFUSION BARRIER STABILITY - ANALYTICAL AND ELECTRICAL CHARACTERIZATION OF LOW-LEVEL CU CONTAMINATION IN SI, Microelectronic engineering, 37-8(1-4), 1997, pp. 245-251
Authors:
ISTRATOV AA
HIESLMAIR H
FLINK C
HEISER T
WEBER ER
Citation: Aa. Istratov et al., INTERSTITIAL COPPER-RELATED CENTER IN N-TYPE SILICON, Applied physics letters, 71(16), 1997, pp. 2349-2351
Authors:
ISTRATOV AA
FLINK C
HIELSMAIR H
HEISER T
WEBER ER
Citation: Aa. Istratov et al., INFLUENCE OF INTERSTITIAL COPPER ON DIFFUSION LENGTH AND LIFETIME OF MINORITY-CARRIERS IN P-TYPE SILICON, Applied physics letters, 71(15), 1997, pp. 2121-2123
Authors:
HEISER T
MCHUGO S
HIESLMAIR H
WEBER ER
Citation: T. Heiser et al., TRANSIENT ION DRIFT DETECTION OF LOW-LEVEL COPPER CONTAMINATION IN SILICON, Applied physics letters, 70(26), 1997, pp. 3576-3578
Authors:
SIMON L
FAURE J
MESLI A
HEISER T
GROB JJ
BALLADORE JL
Citation: L. Simon et al., XTEM AND IR ABSORPTION ANALYSIS OF SILICON-CARBIDE PREPARED BY HIGH-TEMPERATURE CARBON IMPLANTATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 330-333
Authors:
HEISER T
MESLI A
Citation: T. Heiser et A. Mesli, IRON DIFFUSIVITY IN SILICON - IMPACT OF CHARGE-STATE - COMMENT, Applied physics letters, 68(13), 1996, pp. 1868-1869
Authors:
DIANI M
MESLI A
KUBLER L
CLAVERIE A
BALLADORE JL
AUBEL D
PEYRE S
HEISER T
BISCHOFF JL
Citation: M. Diani et al., OBSERVATION OF SI OUT-DIFFUSION RELATED DEFECTS IN SIC GROWTH ON SI(001), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 110-113
Authors:
ZAMOUCHE A
HEISER T
MESLI A
Citation: A. Zamouche et al., INVESTIGATION OF FAST DIFFUSING IMPURITIES IN SILICON BY A TRANSIENT ION DRIFT METHOD, Applied physics letters, 66(5), 1995, pp. 631-633
Authors:
MESLI A
HEISER T
MULHEIM E
Citation: A. Mesli et al., COPPER DIFFUSIVITY IN SILICON - A REEXAMINATION, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 141-146
Authors:
HEISER T
MESLI A
Citation: T. Heiser et A. Mesli, DETERMINATION OF THE COPPER DIFFUSION-COEFFICIENT IN SILICON FROM TRANSIENT ION-DRIFT, Applied physics. A, Solids and surfaces, 57(4), 1993, pp. 325-328
Risultati:
1-15
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