Authors: SATOH S HEMINK G HATAKEYAMA K ARITOME S

Citation: S. Satoh et al., STRESS-INDUCED LEAKAGE CURRENT OF TUNNEL OXIDE DERIVED FROM FLASH MEMORY READ-DISTURB CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 482-486

Authors: ARITOME S TAKEUCHI Y SATO S WATANABE H SHIMIZU K HEMINK G SHIROTA R

Citation: S. Aritome et al., A SIDE-WALL TRANSFER-TRANSISTOR CELL (SWATT CELL) FOR HIGHLY RELIABLEMULTILEVEL NAND EEPROMS, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 145-152

Authors: ARITOME S HATAKEYAMA I ENDOH T YAMAGUCHI T SHUTO S IIZUKA H MARUYAMA T WATANABE H HEMINK G SAKUI K TANAKA T MOMODOMI M SHIROTA R

Citation: S. Aritome et al., AN ADVANCED NAND-STRUCTURE CELL TECHNOLOGY FOR RELIABLE 3.3-V-64 MB ELECTRICALLY ERASABLE AND PROGRAMMABLE READ ONLY MEMORIES (EEPROMS), JPN J A P 1, 33(1B), 1994, pp. 524-528

Authors: HEMINK G ENDOH T SHIROTA R

Citation: G. Hemink et al., MODELING OF THE HOLE CURRENT CAUSED BY FOWLER-NORDHEIM TUNNELING THROUGH THIN OXIDES, JPN J A P 1, 33(1B), 1994, pp. 546-549

Authors: ARITOME S SHIROTA R HEMINK G ENDOH T MASUOKA F

Citation: S. Aritome et al., RELIABILITY ISSUES OF FLASH MEMORY CELLS, Proceedings of the IEEE, 81(5), 1993, pp. 776-788