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Results: 1-9 |
Results: 9
REDUCED DAMAGE REACTIVE ION ETCHING PROCESS FOR FABRICATION OF INGAASP INGAAS MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS/
Authors: QIU BC OOI BS BRYCE AC HICKS SE WILKINSON CDW DELARUE RM MARSH JH
Citation: Bc. Qiu et al., REDUCED DAMAGE REACTIVE ION ETCHING PROCESS FOR FABRICATION OF INGAASP INGAAS MULTIPLE-QUANTUM-WELL RIDGE-WAVE-GUIDE LASERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1818-1822
DEEP, VERTICAL ETCHING OF FLAME HYDROLYSIS DEPOSITED HI-SILICA GLASS-FILMS FOR OPTOELECTRONIC AND BIOELECTRONIC APPLICATIONS
Authors: MCLAUGHLIN AJ BONAR JR JUBBER MG MARQUES PVS HICKS SE WILKINSON CDW AITCHISON JS
Citation: Aj. Mclaughlin et al., DEEP, VERTICAL ETCHING OF FLAME HYDROLYSIS DEPOSITED HI-SILICA GLASS-FILMS FOR OPTOELECTRONIC AND BIOELECTRONIC APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1860-1863
IMPROVING THE RESISTANCE OF PECVD SILICON-NITRIDE TO DRY-ETCHING USING AN OXYGEN PLASMA
Authors: HICKS SE MURAD SK STURROCK I WILKINSON CDW
Citation: Se. Hicks et al., IMPROVING THE RESISTANCE OF PECVD SILICON-NITRIDE TO DRY-ETCHING USING AN OXYGEN PLASMA, Microelectronic engineering, 35(1-4), 1997, pp. 41-44
CONTROLLING THE STRAIN AND LIGHT-EMISSION FROM SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS HICKS SE NI WX TORRES CMS HANSSON GV WILKINSON CDW
Citation: Ys. Tang et al., CONTROLLING THE STRAIN AND LIGHT-EMISSION FROM SI-SI1-XGEX QUANTUM DOTS, Thin solid films, 294(1-2), 1997, pp. 304-307
STUDY OF C2F6 OVERETCH INDUCED DAMAGE AND THE EFFECTS OF OVERETCH ON SUBSEQUENT SICL4 ETCH OF GAAS ALGAAS/
Authors: OOI BS HICKS SE BRYCE AC WILKINSON CDW MARSH JH
Citation: Bs. Ooi et al., STUDY OF C2F6 OVERETCH INDUCED DAMAGE AND THE EFFECTS OF OVERETCH ON SUBSEQUENT SICL4 ETCH OF GAAS ALGAAS/, Journal of applied physics, 77(10), 1995, pp. 4961-4966
SUPPRESSION OF BANDGAP SHIFTS IN GAAS ALGAAS MULTIQUANTUM WELLS USINGHYDROGEN PLASMA PROCESSING/
Authors: HAMILTON CJ HICKS SE VOGELE B MARSH JH AITCHISON JS
Citation: Cj. Hamilton et al., SUPPRESSION OF BANDGAP SHIFTS IN GAAS ALGAAS MULTIQUANTUM WELLS USINGHYDROGEN PLASMA PROCESSING/, Electronics Letters, 31(16), 1995, pp. 1393-1394
REFLECTANCE MODELING FOR IN-SITU DRY ETCH MONITORING OF BULK SIO2 ANDIII-V MULTILAYER STRUCTURES
Authors: HICKS SE PARKES W WILKINSON JAH WILKINSON CDW
Citation: Se. Hicks et al., REFLECTANCE MODELING FOR IN-SITU DRY ETCH MONITORING OF BULK SIO2 ANDIII-V MULTILAYER STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3306-3310
NEUTRON-SCATTERING CROSS-SECTIONS FOR PB-204,206 NEUTRON AND PROTON AMPLITUDES OF E2 AND E3 EXCITATIONS
Authors: HICKS SF HANLY JM HICKS SE SHEN GR MCELLISTREM MT
Citation: Sf. Hicks et al., NEUTRON-SCATTERING CROSS-SECTIONS FOR PB-204,206 NEUTRON AND PROTON AMPLITUDES OF E2 AND E3 EXCITATIONS, Physical review. C. Nuclear physics, 49(1), 1994, pp. 103-115
LOW-LOSS MIRRORS FOR INP INGAASP WAVE-GUIDES
Authors: BURNESS AL LOOSEMORE PH JUDGE SN HENNING ID HICKS SE DOUGHTY GF ASGHARI M WHITE I
Citation: Al. Burness et al., LOW-LOSS MIRRORS FOR INP INGAASP WAVE-GUIDES, Electronics Letters, 29(6), 1993, pp. 520-521
Risultati: 1-9 |