AAAAAA

   
Results: 1-8 |
Results: 8
SEPARATION OF THE BULK AND SURFACE COMPONENTS IN AUGER-ELECTRON SPECTROSCOPY
Authors: ARABCZYK W MUSSIG HJ DABROWSKI J MOSZYNSKI D HINRICH S
Citation: W. Arabczyk et al., SEPARATION OF THE BULK AND SURFACE COMPONENTS IN AUGER-ELECTRON SPECTROSCOPY, Applied surface science, 135(1-4), 1998, pp. 59-64
SURFACE RECONSTRUCTION SUGGESTS A NUCLEATION MECHANISM IN BULK - SB SI(113) AND (113)PLANAR DEFECTS/
Authors: DABROWSKI J MUSSIG HJ WOLFF G HINRICH S
Citation: J. Dabrowski et al., SURFACE RECONSTRUCTION SUGGESTS A NUCLEATION MECHANISM IN BULK - SB SI(113) AND (113)PLANAR DEFECTS/, Surface science, 411(1-2), 1998, pp. 54-60
LOW-COVERAGE ADSORPTION OF SB-4 ON SI(113) STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors: MUSSIG HJ DABROWSKI J ARABCZYK W HINRICH S WOLFF G
Citation: Hj. Mussig et al., LOW-COVERAGE ADSORPTION OF SB-4 ON SI(113) STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 982-987
STRUCTURAL MODELS FOR SB ON SI(113) - AN EXPERIMENTAL AND THEORETICALSTM STUDY
Authors: MUSSIG WHJ DABROWSKI J ARABCZYK W HINRICH S
Citation: Whj. Mussig et al., STRUCTURAL MODELS FOR SB ON SI(113) - AN EXPERIMENTAL AND THEORETICALSTM STUDY, Surface science, 358(1-3), 1996, pp. 667-672
MICROMORPHOLOGY OF GE AND SI1-XGEX LAYERS GROWN ON SI(001) BY SOLUTION EPITAXY AND THE NEGATIVE-DIFFERENTIAL CONDUCTIVITY ON THE GE LAYER
Authors: MUSSIG HJ KRUGER D HINRICH S HANSSON PO
Citation: Hj. Mussig et al., MICROMORPHOLOGY OF GE AND SI1-XGEX LAYERS GROWN ON SI(001) BY SOLUTION EPITAXY AND THE NEGATIVE-DIFFERENTIAL CONDUCTIVITY ON THE GE LAYER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1342-1347
THE RECONSTRUCTION OF THE SI(113) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPE
Authors: ARABCZYK W HINRICH S MUSSIG HJ
Citation: W. Arabczyk et al., THE RECONSTRUCTION OF THE SI(113) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPE, Vacuum, 46(5-6), 1995, pp. 473-476
NEGATIVE-DIFFERENTIAL CONDUCTIVITY MEASURED ON A GERMANIUM LAYER ON SI(001)
Authors: MUSSIG HJ KRUGER D HINRICH S HANSSON PO
Citation: Hj. Mussig et al., NEGATIVE-DIFFERENTIAL CONDUCTIVITY MEASURED ON A GERMANIUM LAYER ON SI(001), Surface science, 314(3), 1994, pp. 120000884-120000888
TOPOLOGICAL EFFECTS REGARDING TRENCH STRUCTURES COVERED WITH LPCVD AND PECVD THIN-FILMS
Authors: SCHLOTE J HINRICH S KUCK B SCHRODER KW
Citation: J. Schlote et al., TOPOLOGICAL EFFECTS REGARDING TRENCH STRUCTURES COVERED WITH LPCVD AND PECVD THIN-FILMS, Surface & coatings technology, 59(1-3), 1993, pp. 316-320
Risultati: 1-8 |