Authors: HIROYAMA R UETANI T BESSHO Y SHONO M SAWADA M IBARAKI A

Citation: R. Hiroyama et al., HIGH-POWER 630 NM BAND LASER-DIODES WITH STRAIN-COMPENSATED SINGLE-QUANTUM-WELL ACTIVE LAYER, Electronics Letters, 33(12), 1997, pp. 1084-1086

Authors: BESSHO Y UETANI T HIROYAMA R KOMEDA K SHONO M IBARAKI A YODOSHI K NIINA T

Citation: Y. Bessho et al., SELF-PULSATING 630NM BAND STRAIN-COMPENSATED MQW ALGAINP LASER-DIODES, Electronics Letters, 32(7), 1996, pp. 667-668

Authors: HAMADA H HIROYAMA R HONDA S SHONO M YODOSHI K YAMAGUCHI T

Citation: H. Hamada et al., ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES, IEEE journal of quantum electronics, 29(6), 1993, pp. 1844-1850

Authors: SHONO M HONDA S IKEGAMI T BESSYO Y HIROYAMA R KASE H YODOSHI K YAMAGUCHI T NIINA T

Citation: M. Shono et al., HIGH-POWER OPERATION OF 630 NM-BAND TENSILE-STRAINED MULTI-QUANTUM-WELL ALGAINP LASER-DIODES WITH A MULTIQUANTUM BARRIER, Electronics Letters, 29(11), 1993, pp. 1010-1011