Authors:
KOMATSU M
OYOSHI K
HISHITA S
MATSUISHI K
ONARI S
ARAI T
Citation: M. Komatsu et al., VISIBLE PHOTOLUMINESCENCE IN THERMALLY ANNEALED BI IMPLANTED SIO2-FILMS, Materials chemistry and physics, 54(1-3), 1998, pp. 286-288
Citation: T. Suzuki et al., SURFACE SEGREGATION OF IMPLANTED IONS - BI, EU, AND TI AT THE MGO(100) SURFACE, Applied surface science, 132, 1998, pp. 534-538
Authors:
FINK D
VACIK J
CERVENA J
HNATOWICZ V
KOBAYASHI Y
HISHITA S
GHOSH S
KLETT R
Citation: D. Fink et al., ON THE UPTAKE OF AQUEOUS TRACER SOLUTIONS BY PRISTINE AND ION-IRRADIATED PEEK, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(1), 1998, pp. 61-72
Authors:
SAKAGUCHI I
NISHITANIGAMO M
LOH KP
HISHITA S
HANEDA H
ANDO T
Citation: I. Sakaguchi et al., SUPPRESSION OF SURFACE CRACKS ON (111) HOMOEPITAXIAL DIAMOND THROUGH IMPURITY LIMITATION BY OXYGEN ADDITION, Applied physics letters, 73(18), 1998, pp. 2675-2677
Citation: K. Hirata et al., DAMAGE DEPTH-PROFILING OF AU-IRRADIATED AMORPHOUS PEEK BY MONOENERGETIC POSITRON BEAMS( AND O+), Applied physics A: Materials science & processing, 64(5), 1997, pp. 491-495
Citation: S. Kim et S. Hishita, PREPARATION AND CHARACTERIZATION OF BATIO3 THIN-FILMS ON MGO-BUFFEREDSI(100) SUBSTRATES BY RF-SPUTTERING, Journal of materials research, 12(4), 1997, pp. 1152-1159
Citation: S. Hishita et al., EFFECT OF OXYGEN-ADSORPTION ON ION-BEAM-INDUCED RECRYSTALLIZATION OF COPPER-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 157-161
Authors:
OYOSHI K
HISHITA S
SUEHARA S
AIZAWA T
HANEDA H
Citation: K. Oyoshi et al., ION-BEAM-INDUCED EPITAXIAL CRYSTALLIZATION OF SRTIO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 184-186
Authors:
HIRATA K
KOBAYASHI Y
HISHITA S
ZHAO X
ITOH Y
OHDAIRA T
SUZUKI R
UJIHIRA Y
Citation: K. Hirata et al., VARIABLE-ENERGY POSITRON BEAM SYSTEM AND ITS APPLICATION TO DEPTH-SELECTIVE DEFECT ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 267-270
Authors:
SAKAGUCHI I
NISHITANIGAMO M
LOH KP
HANEDA H
HISHITA S
ANDO T
Citation: I. Sakaguchi et al., SILICON INCORPORATION INTO CHEMICAL-VAPOR-DEPOSITION DIAMOND - A ROLEOF OXYGEN, Applied physics letters, 71(5), 1997, pp. 629-631
Authors:
KIKUCHI N
HOSONO H
KAWAZOE H
OYOSHI K
HISHITA S
Citation: N. Kikuchi et al., TRANSPARENT, CONDUCTING, AMORPHOUS OXIDES - EFFECT OF CHEMICAL-COMPOSITION ON ELECTRICAL AND OPTICAL-PROPERTIES OF CADMIUM GERMANATES, Journal of the American Ceramic Society, 80(1), 1997, pp. 22-26
Citation: H. Hosono et al., FORMATION AND OPTICAL-PROPERTIES OF NANOMETER-SIZED AMORPHOUS ARSENICCLUSTERS EMBEDDED IN AMORPHOUS SIO2 BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 178-182
Authors:
KITAJIMA M
KAMIOKA I
NAKAMURA KG
HISHITA S
Citation: M. Kitajima et al., OXIDATION RATE AND SURFACE-POTENTIAL VARIATIONS OF SILICON DURING PLASMA OXIDATION, Physical review. B, Condensed matter, 53(7), 1996, pp. 3993-3999
Citation: S. Kim et S. Hishita, GROWING BATIO3 THIN-FILMS ON SI(100) WITH MGO-BUFFER LAYERS BY SPUTTERING, Thin solid films, 282(1-2), 1996, pp. 449-452
Authors:
SAKAGUCHI I
HISHITA S
HANEDA H
YANAGITANI T
Citation: I. Sakaguchi et al., EFFECT OF SILICON IMPLANTATION AND ANNEALING ON OXYGEN IN Y3AL5O12, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 10-12
Authors:
KOBAYASHI Y
KOJIMA I
HISHITA S
SUZUKI T
ASARI E
KITAJIMA M
Citation: Y. Kobayashi et al., DAMAGE-DEPTH PROFILING OF AN ION-IRRADIATED POLYMER BY MONOENERGETIC POSITRON BEAMS, Physical review. B, Condensed matter, 52(2), 1995, pp. 823-828
Citation: Jh. Kim et S. Hishita, THE EFFECTS OF SUBSTRATES ON THE THIN-FILM STRUCTURES OF BATIO3, Journal of Materials Science, 30(18), 1995, pp. 4645-4650
Citation: S. Kim et al., STRUCTURAL CHARACTERIZATION OF EPITAXIAL BATIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION ON MGO(100), Journal of applied physics, 78(9), 1995, pp. 5604-5608
Authors:
SAKAGUCHI I
HANEDA H
HISHITA S
WATANABE A
TANAKA J
Citation: I. Sakaguchi et al., OXYGEN DIFFUSION IN ION-IMPLANTED LAYER OF NB-DOPED SRTIO3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(4), 1994, pp. 411-416
Citation: S. Hishita et al., CHEMICAL-STATES OF IMPLANTED IONS IN AN OXIDE CRYSTAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 571-574