Authors: LAXMAN RK HOCHBERG AK ROBERTS DA VRTIS RN OVALLE S

Citation: Rk. Laxman et al., PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF FLUORINATED SILICON DIOXIDE FILMS USING NOVEL ALKYLSILANES, Advanced materials for optics and electronics, 6(2), 1996, pp. 93-99

Authors: PARMETER JE PETERSEN GA SMITH PM APBLETT CA REID JS NORMAN JAT HOCHBERG AK ROBERTS DA OMSTEAD TR

Citation: Je. Parmeter et al., CHARACTERIZATION OF THIN COPPER-FILMS GROWN VIA CHEMICAL-VAPOR-DEPOSITION USING LIQUID COINJECTION OF TRIMETHYLVINYLSILANE AND (HEXAFLUOROACETYLACETONATE) CU (TRIMETHYLVINYLSILANE), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 130-136

Authors: LAXMAN RK HOCHBERG AK CHENG HS ROBERTS DA

Citation: Rk. Laxman et al., CYCLIC ALKYLSILANES AS LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION SILICONDIOXIDE PRECURSORS, Thin solid films, 263(1), 1995, pp. 117-121

Authors: NORMAN JAT ROBERTS DA HOCHBERG AK SMITH P PETERSEN GA PARMETER JE APBLETT CA OMSTEAD TR

Citation: Jat. Norman et al., CHEMICAL ADDITIVES FOR IMPROVED COPPER CHEMICAL-VAPOR-DEPOSITION PROCESSING, Thin solid films, 262(1-2), 1995, pp. 46-51

Authors: MARTIN JG ONEAL HE RING MA ROBERTS DA HOCHBERG AK

Citation: Jg. Martin et al., MECHANISMS OF SILICON DIOXIDE DEPOSITION FROM THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF DIETHYLSILANE OXYGEN MIXTURES, Journal of the Electrochemical Society, 142(11), 1995, pp. 3873-3880