AAAAAA
Results:
1-10
|
Results: 10
Authors:
HOLMEN G
SONGSIRIRITTHIGUL P
Citation: G. Holmen et P. Songsiriritthigul, RELAXATION OF STRAIN DURING SOLID-PHASE EPITAXIAL-GROWTH OF GE-IMPLANTED LAYERS IN SILICON( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 143(3), 1998, pp. 342-356
Authors:
SONGSIRIRITTHIGUL P
HOLMEN G
Citation: P. Songsiriritthigul et G. Holmen, STRAIN-INDUCED DEFECTS IN SI1-XGEX-ALLOY LAYERS FORMED BY SOLID-PHASEEPITAXIAL-GROWTH OF 40 KEV GE-IMPLANTED SILICON( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 124(1), 1997, pp. 55-62
Authors:
SONGSIRIRITTHIGUL P
HOLMEN G
OLSSON E
Citation: P. Songsiriritthigul et al., STRAINED SIGE-ALLOY LAYERS FORMED BY SOLID-PHASE EPITAXIAL-GROWTH OF GE-IMPLANTED SILICON( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 630-634
Authors:
HE ZQ
ILVER L
KANSKI J
NILSSON PO
SONGSIRIRITTHIGUL P
HOLMEN G
KARLSSON UO
Citation: Zq. He et al., BAND-STRUCTURE EVOLUTION IN INAS OVERLAYERS ON GAAS(110), Applied surface science, 104, 1996, pp. 608-614
Authors:
SONGSIRIRITTHIGUL P
HOLMEN G
Citation: P. Songsiriritthigul et G. Holmen, THERMAL SOLID-PHASE EPITAXIAL-GROWTH AND ION-BEAM-INDUCED CRYSTALLIZATION OF GE-IMPLANTED LAYERS IN SILICON( ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 207-211
Authors:
SONGSIRIRITTHIGUL P
HOLMEN G
Citation: P. Songsiriritthigul et G. Holmen, CHANNELING AND STEERING EFFECTS ON 2 MEV HE2-IMPLANTED SIGE-ALLOY LAYERS( IONS IN GE+ ION), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 355-358
Authors:
JACOBSSON H
HOLMEN G
Citation: H. Jacobsson et G. Holmen, ELECTRON-EMISSION FROM ION-BOMBARDED SIO2 THIN-FILMS, Physical review. B, Condensed matter, 49(3), 1994, pp. 1789-1795
Authors:
JACOBSSON H
HOLMEN G
Citation: H. Jacobsson et G. Holmen, COLLISIONAL VERSUS ELECTRONIC SPUTTERING OF SIO2, Journal of applied physics, 75(12), 1994, pp. 8109-8113
Authors:
JACOBSSON H
HOLMEN G
Citation: H. Jacobsson et G. Holmen, THE SPUTTERING OF SIO2 AND ITS DEPENDENCE ON OXYGEN PARTIAL-PRESSURE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(2), 1993, pp. 291-300
Authors:
JACOBSSON H
HOLMEN G
Citation: H. Jacobsson et G. Holmen, THE DEPENDENCE OF SI AND SIO2 ELECTRON-EMISSION ON THE ANGLE OF ION INCIDENCE, Journal of applied physics, 74(10), 1993, pp. 6397-6400
Risultati:
1-10
|