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Results: 1-14 |
Results: 14
SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY
Authors: HOLMES DM TOK ES SUDIJONO JL JONES TS JOYCE BA
Citation: Dm. Holmes et al., SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY, Journal of crystal growth, 192(1-2), 1998, pp. 33-46
DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A
Authors: HOLMES DM SUDIJONO JL MCCONVILLE CF JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A, Surface science, 370(1), 1997, pp. 173-178
NUCLEATION AND GROWTH OF ISLANDS ON GAAS-SURFACES
Authors: AVERY AR DOBBS HT HOLMES DM JOYCE BA VVEDENSKY DD
Citation: Ar. Avery et al., NUCLEATION AND GROWTH OF ISLANDS ON GAAS-SURFACES, Physical review letters, 79(20), 1997, pp. 3938-3941
JAPANESE-BEETLE (POPILLIA-JAPONICA) DISPERSAL BEHAVIOR IN INTERCROPPED VS MONOCULTURE SOYBEAN AGROECOSYSTEMS
Authors: HOLMES DM BARRETT GW
Citation: Dm. Holmes et Gw. Barrett, JAPANESE-BEETLE (POPILLIA-JAPONICA) DISPERSAL BEHAVIOR IN INTERCROPPED VS MONOCULTURE SOYBEAN AGROECOSYSTEMS, The American midland naturalist, 137(2), 1997, pp. 312-319
GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY
Authors: JOYCE BA NEAVE JH FAHY MR SATO K HOLMES DM BELK JG SUDIJONO JL JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 849-853
SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4)
Authors: BELK JG SUDIJONO JL HOLMES DM MCCONVILLE CF JONES TS JOYCE BA
Citation: Jg. Belk et al., SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4), Surface science, 365(3), 1996, pp. 735-742
MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES
Authors: AVERY AR GORINGE CM HOLMES DM SUDIJONO JL JONES TS
Citation: Ar. Avery et al., MECHANISM FOR DISORDER ON GAAS(001)-(2X4) SURFACES, Physical review letters, 76(18), 1996, pp. 3344-3347
THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110)
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110), Surface science, 341(1-2), 1995, pp. 133-141
THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES
Authors: AVERY AR HOLMES DM SUDIJONO J JONES TS JOYCE BA
Citation: Ar. Avery et al., THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES, Surface science, 323(1-2), 1995, pp. 91-101
A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING
Authors: AVERY AR HOLMES DM SUDIJONO JL JONES TS FAHY MR JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208
DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY
Authors: HOLMES DM BELK JG SUDIJONO JL NEAVE JH JONES TS JOYCE BA
Citation: Dm. Holmes et al., DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(19), 1995, pp. 2848-2850
SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4)
Authors: AVERY AR SUDIJONO J HOLMES DM JONES TS JOYCE BA
Citation: Ar. Avery et al., SI-INDUCED ISLAND FORMATION AND SURFACE ORDERING ON GAAS(001)-C(4X4), Applied physics letters, 66(23), 1995, pp. 3200-3202
ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS
Authors: AVERY AR HOLMES DM JONES TS JOYCE BA BRIGGS GAD
Citation: Ar. Avery et al., ARSENIC-DEFICIENT GAAS(001)-(2X4) SURFACES - SCANNING-TUNNELING-MICROSCOPY EVIDENCE FOR LOCALLY DISORDERED (1X2) GA REGIONS, Physical review. B, Condensed matter, 50(11), 1994, pp. 8098-8101
Risultati: 1-14 |