Authors:
HOLMES DM
TOK ES
SUDIJONO JL
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., SURFACE EVOLUTION IN GAAS(110) HOMOEPITAXY - FROM MICROSCOPIC TO MACROSCOPIC MORPHOLOGY, Journal of crystal growth, 192(1-2), 1998, pp. 33-46
Authors:
HOLMES DM
SUDIJONO JL
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIRECT EVIDENCE FOR THE STEP DENSITY MODEL IN THE INITIAL-STAGES OF THE LAYER-BY-LAYER HOMOEPITAXIAL GROWTH OF GAAS(111)A, Surface science, 370(1), 1997, pp. 173-178
Citation: Dm. Holmes et Gw. Barrett, JAPANESE-BEETLE (POPILLIA-JAPONICA) DISPERSAL BEHAVIOR IN INTERCROPPED VS MONOCULTURE SOYBEAN AGROECOSYSTEMS, The American midland naturalist, 137(2), 1997, pp. 312-319
Authors:
JOYCE BA
NEAVE JH
FAHY MR
SATO K
HOLMES DM
BELK JG
SUDIJONO JL
JONES TS
Citation: Ba. Joyce et al., GROWTH DYNAMICS OF GAAS, ALAS AND (AL,GA)AS ON GAAS(110) AND GAAS(111)A SUBSTRATES DURING MOLECULAR-BEAM EPITAXY, Journal of materials science. Materials in electronics, 7(5), 1996, pp. 327-332
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIFFERENT GROWTH MODES IN GAAS(110) HOMOEPITAXY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 849-853
Authors:
BELK JG
SUDIJONO JL
HOLMES DM
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4), Surface science, 365(3), 1996, pp. 735-742
Authors:
AVERY AR
HOLMES DM
SUDIJONO J
JONES TS
JOYCE BA
Citation: Ar. Avery et al., THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES, Surface science, 323(1-2), 1995, pp. 91-101
Authors:
AVERY AR
HOLMES DM
SUDIJONO JL
JONES TS
FAHY MR
JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., DIFFERENCES BETWEEN AS-2 AND AS-4 IN THE HOMOEPITAXIAL GROWTH OF GAAS(110) BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(19), 1995, pp. 2848-2850