Authors:
TAKANO H
NAKANO H
MINAMI H
HOSOGI K
YOSHIDA N
SATO K
HIROSE Y
TSUBOUCHI N
Citation: H. Takano et al., ELECTRON-BEAM ULTRAVIOLET HYBRID EXPOSURE COMBINED WITH NOVEL BILAYERRESIST SYSTEM FOR A 0.15-MU-M T-SHAPED GATE FABRICATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3483-3488
Authors:
TAKANO H
HOSOGI K
KATO T
OKU T
KOHNO Y
NAKANO H
SATO K
FUNADA M
ISHIHARA O
TSUBOUCHI N
Citation: H. Takano et al., NOVEL WSI AU T-SHAPED GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR FABRICATION PROCESS FOR SUPER LOW-NOISE MICROWAVE MONOLITHIC INTEGRATED-CIRCUIT AMPLIFIERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1014-1017
Authors:
ISHIKAWA T
HOSOGI K
KATSUMATA M
MINAMI H
MITSUI Y
Citation: T. Ishikawa et al., A STUDY ON RELIABILITY AND FAILURE-MECHANISM OF T-SHAPED GATE HEMTS, IEICE transactions on fundamentals of electronics, communications and computer science, E77A(1), 1994, pp. 158-165