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Results: 1-25/111
Authors:
HOSONO H
KURITA M
KAWAZOE H
Citation: H. Hosono et al., EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS INDIUM-TIN-OXIDE AND ITS APPLICATION TO FINE PATTERNING, JPN J A P 2, 37(10A), 1998, pp. 1119-1121
Authors:
IKEDA S
TAKATA T
KONDO T
HITOKI G
HARA M
KONDO JN
DOMEN K
HOSONO H
KAWAZOE H
TANAKA A
Citation: S. Ikeda et al., MECHANO-CATALYTIC OVERALL WATER-SPLITTING, Chemical communications, (20), 1998, pp. 2185-2186
Authors:
HOSONO H
KINOSHITA T
KAWAZOE H
YAMAZAKI M
YAMAMOTO Y
SAWANOBORI N
Citation: H. Hosono et al., LONG-LASTING PHOSPHORESCENCE PROPERTIES OF TB3-ACTIVATED REDUCED CALCIUM ALUMINATE GLASSES(), Journal of physics. Condensed matter (Print), 10(42), 1998, pp. 9541-9547
Authors:
UEDA K
YANAGI H
NOSHIRO R
HOSONO H
KAWAZOE H
Citation: K. Ueda et al., VACUUM-ULTRAVIOLET REFLECTANCE AND ELECTRON-ENERGY-LOSS SPECTRA OF CATIO3, Journal of physics. Condensed matter, 10(16), 1998, pp. 3669-3677
Authors:
KAWAMURA K
KAMESHIMA Y
HOSONO H
KAWAZOE H
Citation: K. Kawamura et al., PROTON-IMPLANTATION-INDUCED OPTICAL PHENOMENA IN SIO2-GEO2 GLASSES - FORMATION OF PHOTOSENSITIVE DEFECTS AND NANOMETER-SIZED GE CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 54(1-2), 1998, pp. 18-23
Authors:
MIZUGUCHI M
HOSONO H
KAWAZOE H
Citation: M. Mizuguchi et al., DETECTION AND ANALYSIS OF SI-29 HYPERFINE STRUCTURES IN ESR-SPECTRA OF E' AND E'-TYPE CENTERS IN SIO2 GLASSES, Materials science & engineering. B, Solid-state materials for advanced technology, 54(1-2), 1998, pp. 38-42
ENHANCEMENT OF CARRIER GENERATION IN MGIN2O4 THIN-FILM PREPARED BY PULSED-LASER DEPOSITION TECHNIQUE
Authors:
KUDO A
YANAGI H
HOSONO H
KAWAZOE H
Citation: A. Kudo et al., ENHANCEMENT OF CARRIER GENERATION IN MGIN2O4 THIN-FILM PREPARED BY PULSED-LASER DEPOSITION TECHNIQUE, Materials science & engineering. B, Solid-state materials for advanced technology, 54(1-2), 1998, pp. 51-54
Authors:
UEDA K
YANAGI H
HOSONO H
KAWAZOE H
Citation: K. Ueda et al., CARRIER COMPENSATION AND GENERATION IN CA1-XYXTIO3 AND CATI1-XNBXO3 SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 54(1-2), 1998, pp. 60-63
Authors:
UEDA K
YANAGI H
NOSHIRO R
MIZOGUCHI H
OMATA T
UEDA N
HOSONO H
KAWAZOE H
Citation: K. Ueda et al., OBSERVATION OF ELECTRONIC-STRUCTURE IN CONDUCTION-BAND OF CATIO3, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 106(10), 1998, pp. 964-967
Authors:
MIZUGUCHI M
HOSONO H
KAWAZOE H
OGAWA T
Citation: M. Mizuguchi et al., GENERATION OF OPTICAL-ABSORPTION BANDS IN CAF2 SINGLE CRYSTALS BY ARFEXCIMER-LASER IRRADIATION - EFFECT OF YTTRIUM IMPURITY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3052-3057
Authors:
FUJII S
HIRUMA T
KAMEYAMA K
HOSONO H
HAYASHI Y
KITAMURA K
Citation: S. Fujii et al., CILNIDIPINE, A NOVEL DIHYDROPYRIDINE DERIVATIVE, MODULATES SYMPATHETIC-NERVE ACTIVITY THROUGH N-TYPE CA-CHANNEL BLOCKADE(+), Journal of hypertension, 16, 1998, pp. 31015-31015
Authors:
HOSONO H
MATSUNAMI N
Citation: H. Hosono et N. Matsunami, DEFECT FORMATION IN AMORPHOUS SIO2 BY ION-IMPLANTATION - ELECTRONIC EXCITATION EFFECTS AND CHEMICAL EFFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 566-574
Authors:
NISHII J
YAMANAKA H
HOSONO H
KAWAZOE H
Citation: J. Nishii et al., ORIGIN OF ENORMOUS PHOTON-INDUCED VOLUME EXPANSION OF GEO2-SIO2 THIN GLASS-FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 625-628
Authors:
HOSONO H
KAWAZOE H
MATSUNAMI N
Citation: H. Hosono et al., EXPERIMENTAL-EVIDENCE FOR FRENKEL DEFECT FORMATION IN AMORPHOUS SIO2 BY ELECTRONIC EXCITATION, Physical review letters, 80(2), 1998, pp. 317-320
Authors:
YAMAZAKI M
YAMAMOTO Y
NAGAHAMA S
SAWANOBORI N
MIZUGUCHI M
HOSONO H
Citation: M. Yamazaki et al., LONG LUMINESCENT GLASS - TB3-ACTIVATED ZNO-B2O-SIO2 GLASS(), Journal of non-crystalline solids, 241(1), 1998, pp. 71-73
Authors:
WATANABE Y
NISHII J
MORIWAKI H
FURUHASHI G
HOSONO H
KAWAZOE H
Citation: Y. Watanabe et al., PERMANENT REFRACTIVE-INDEX CHANGES IN GEO2 GLASS SLABS INDUCED BY IRRADIATION WITH SUB BAND-GAP LIGHT, Journal of non-crystalline solids, 239(1-3), 1998, pp. 104-107
Authors:
HOSONO H
MAEDA H
KAMESHIMA Y
KAWAZOE H
Citation: H. Hosono et al., NOVEL N-TYPE CONDUCTING AMORPHOUS-CHALCOGENIDE CDS.IN2SX - AN EXTENSION OF WORKING HYPOTHESIS FOR CONDUCTING AMORPHOUS OXIDES, Journal of non-crystalline solids, 230, 1998, pp. 804-809
Authors:
SHIMAKAWA K
HOSONO H
KIKUCHI N
KAWAZOE H
Citation: K. Shimakawa et al., FREE-CARRIER ABSORPTION IN HIGHLY CONDUCTING AMORPHOUS OXIDES, Journal of non-crystalline solids, 230, 1998, pp. 513-516
Authors:
TANAKA K
TOYOSAWA N
HOSONO H
Citation: K. Tanaka et al., PHOTOCONDUCTION IN MULTICOMPONENT OXIDE GLASSES, Journal of non-crystalline solids, 224(1), 1998, pp. 43-49
Authors:
UEDA N
MAEDA H
HOSONO H
KAWAZOE H
Citation: N. Ueda et al., BAND-GAP WIDENING OF CDO THIN-FILMS, Journal of applied physics, 84(11), 1998, pp. 6174-6177
Authors:
MIYAKAWA M
KAWAMURA K
HOSONO H
KAWAZOE H
Citation: M. Miyakawa et al., LARGE ELECTRICAL-CONDUCTIVITY ENHANCEMENT OF WO3 THIN-FILMS PRODUCED BY ION-IMPLANTATION, Journal of applied physics, 84(10), 1998, pp. 5610-5613
Authors:
KUDO A
YANAGI H
HOSONO H
KAWAZOE H
Citation: A. Kudo et al., SRCU2O2 - A P-TYPE CONDUCTIVE OXIDE WITH WIDE-BAND GAP, Applied physics letters, 73(2), 1998, pp. 220-222
Authors:
OTABE T
UEDA K
KUDOH A
HOSONO H
KAWAZOE H
Citation: T. Otabe et al., N-TYPE ELECTRICAL-CONDUCTION IN TRANSPARENT THIN-FILMS OF DELAFOSSITE-TYPE AGINO2, Applied physics letters, 72(9), 1998, pp. 1036-1038
Authors:
HOSONO H
KANEKO M
Citation: H. Hosono et M. Kaneko, EFFECT OF METHYLENE CHAIN-LENGTH ON ELECTRON-TRANSFER AND PHOTOCURRENT GENERATION USING VIOLOGEN-LINKED PORPHYRIN MONOLAYER MODIFIED ITO ELECTRODE, Journal of photochemistry and photobiology. A, Chemistry, 107(1-3), 1997, pp. 63-70
Authors:
MIZOGUCHI H
UEDA K
KAWAZOE H
HOSONO H
OMATA T
FUJITSU S
Citation: H. Mizoguchi et al., NEW MIXED-VALENCE OXIDES OF BISMUTH - BI1-XYXO1.5+DELTA (X=0.4), Journal of materials chemistry, 7(6), 1997, pp. 943-946