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Results:
1-8
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Results: 8
Authors:
CHEN MJ
LEE HS
CHEN JH
HOU CS
LIN CS
JOU YN
Citation: Mj. Chen et al., A PHYSICAL MODEL FOR THE CORRELATION BETWEEN HOLDING VOLTAGE AND HOLDING CURRENT IN EPITAXIAL CMOS LATCH-UP, IEEE electron device letters, 19(8), 1998, pp. 276-278
Authors:
CHEN MJ
HUANG HT
HOU CS
YANG KN
Citation: Mj. Chen et al., BACK-GATE BIAS ENHANCED BAND-TO-BAND TUNNELING LEAKAGE IN SCALED MOSFETS, IEEE electron device letters, 19(4), 1998, pp. 134-136
Authors:
LIN YT
SHIEH MS
LIOU HD
HOU CS
Citation: Yt. Lin et al., INVESTIGATION ON THE MASS ENTRAINMENT OF AN ACOUSTICALLY CONTROLLED ELLIPTIC JET, International communications in heat and mass transfer, 25(3), 1998, pp. 379-388
Authors:
CHOU CC
HOU CS
CHENG HF
Citation: Cc. Chou et al., STRUCTURE CONTROL OF PULSED-LASER-DEPOSITED PB0.6SR0.4TIO3 LA0.5SR0.5COO3 THIN-FILMS ON VARIOUS SUBSTRATES/, Ferroelectrics, 206(1-4), 1998, pp. 393-405
Authors:
HOU CS
CHOU CC
CHENG HF
Citation: Cs. Hou et al., EFFECT OF PROCESSING PARAMETERS ON STRUCTURE OF PULSED-LASER DEPOSITED LA0.5SR0.5COO3 THIN-FILMS, Applied surface science, 114, 1997, pp. 207-211
Authors:
HOU CS
WU CY
Citation: Cs. Hou et Cy. Wu, A DESIGN STRATEGY FOR SHORT GATE LENGTH SOI MESFETS, Solid-state electronics, 39(3), 1996, pp. 361-367
Authors:
HOU CS
ZHAO BC
YANG J
YU ZL
WU QX
Citation: Cs. Hou et al., A STUDY ON RHEOLOGIC BEHAVIOR OF POLYPHENYLENE SULFIDE, Journal of applied polymer science, 56(5), 1995, pp. 581-590
Authors:
HOU CS
WU CY
Citation: Cs. Hou et Cy. Wu, A 2-D ANALYTIC MODEL FOR THE THRESHOLD-VOLTAGE OF FULLY DEPLETED SHORT GATE-LENGTH SI-SOI MESFETS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2156-2162
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1-8
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