Citation: C. Hu et al., CONSIDERATION OF LOW-FREQUENCY NOISE IN MOSFETS FOR ANALOG PERFORMANCE, IEEE electron device letters, 17(12), 1996, pp. 552-554
Citation: Dk. Liu et C. Hu, SCATTERING OF FLEXURAL WAVES AND DYNAMIC STRESS-CONCENTRATIONS IN MINDLINS THICK PLATES WITH A CUTOUT, Acta Mechanica Sinica, 12(2), 1996, pp. 169-185
Authors:
GU M
WANG YN
TANG TB
ZHANG WY
HU C
YAN F
FENG D
Citation: M. Gu et al., THE TRANSITION FROM THE ORDERED TO THE MEROHEDRAL DISORDERED PHASE INOXYGENATED SOLID C-60, Physics letters. A, 223(4), 1996, pp. 273-279
Authors:
HU C
ZHAO JL
PIZZARELLO LD
JIANG LJ
LIU QY
MA JL
ZHANG QN
Citation: C. Hu et al., CATARACT FREE ZONE AND PRIMARY HEALTH-CARE APPROACH TO PREVENTION OF BLINDNESS IN SHUNYI COUNTY OF BEIJING, Chinese medical journal, 109(7), 1996, pp. 561-565
Citation: C. Hu et al., FORMATION OF CONTINUOUS SURFACE AL-SICP METAL-MATRIX COMPOSITE BY OVERLAPPING LASER TRACKS ON AA6061 ALLOY, Materials science and technology, 12(3), 1996, pp. 227-232
Citation: Z. Gai et al., CHEMISORPTION OF GROUP-III METALS ON THE (111) SURFACE OF GROUP-IV SEMICONDUCTORS - IN GE(111)/, Physical review. B, Condensed matter, 53(3), 1996, pp. 1539-1547
Citation: Jc. Chen et al., A SIMPLE METHOD OF EXAMINING THE PROPAGATION OF DEFECTS IN THE FLOATING-ZONE SOLIDIFICATION PROCESS OF LITHIUM-NIOBATE, Journal of crystal growth, 166(1-4), 1996, pp. 151-155
Citation: Jc. Chen et C. Hu, MEASUREMENT OF THE SURFACE-TEMPERATURE DISTRIBUTION IN THE FLOAT-ZONEOF LINBO3, Journal of crystal growth, 158(3), 1996, pp. 289-295
Citation: C. Hu et al., BIS(1,2-BIS(DIPHENYLPHOSPHINO)ETHANE)TUNGSTEN(0) COMPLEXES CONTAININGELECTRON-SATURATED METAL CENTERS AND SINGLY-COORDINATED BRIDGING LIGANDS, Inorganic chemistry, 35(6), 1996, pp. 1621-1626
Citation: C. Hu et Jc. Chen, EXPERIMENTAL-OBSERVATION OF INTERFACE SHAPES IN THE FLOAT-ZONE OF LITHIUM-NIOBATE DURING A CO2-LASER MELTING, International journal of heat and mass transfer, 39(16), 1996, pp. 3347-3355
Citation: M. Zheng et al., A DUCTILE DAMAGE MODEL CORRESPONDING TO THE DISSIPATION OF DUCTILITY OF METAL, Engineering fracture mechanics, 53(4), 1996, pp. 653-659
Authors:
CHEN TH
WANG KX
LUO WL
YUAN ZY
WANG JZ
DING DT
LI HX
HU C
Citation: Th. Chen et al., PARTITIONING OF ALUMINUM ATOMS IN CRYSTALLOGRAPHICALLY NONEQUIVALENT TETRAHEDRAL SITES OF THE ZEOLITE OFFRETITE BY SI-29 MAS NMR, Chemical physics letters, 252(5-6), 1996, pp. 375-378
Citation: C. Hu et al., NOISE CHARACTERISTICS OF THIN MULTIPLICATION REGION GAAS AVALANCHE PHOTODIODES, Applied physics letters, 69(24), 1996, pp. 3734-3736
Authors:
RADELLI L
HU C
BIRINDELLI S
BRAY M
MONZA M
PLEBANI A
SCORZA R
Citation: L. Radelli et al., NATURAL-KILLER ACTIVITY, TUMOR-NECROSIS-FACTOR-ALPHA, AND INTERFERON-GAMMA PRODUCTION IN HIV-INFECTED CHILDREN AT VARIOUS STAGES OF DISEASE, Pediatric AIDS and HIV infection, 6(4), 1995, pp. 204-211
Authors:
DOUAY L
HU C
GIARRATANA MC
BOUCHET S
CONLON J
CAPIZZI RL
GORIN NC
Citation: L. Douay et al., AMIFOSTINE IMPROVES THE ANTILEUKEMIC THERAPEUTIC INDEX OF MAFOSFAMIDE- IMPLICATIONS FOR BONE-MARROW PURGING, European journal of cancer, 31A, 1995, pp. 1118-1118
Citation: L. Douay et al., AMIFOSTINE (WR-2721) PROTECTS NORMAL HEMATOPOIETIC STEM-CELLS AGAINSTCYCLOPHOSPHAMIDE DERIVATIVES TOXICITY WITHOUT COMPROMISING THEIR ANTILEUKEMIC EFFECTS, European journal of cancer, 31A, 1995, pp. 14-16
Citation: C. Hu et Tn. Baker, PREDICTION OF LASER TRANSFORMATION HARDENING DEPTH USING A LINE SOURCE MODEL, Acta metallurgica et materialia, 43(9), 1995, pp. 3563-3569
Citation: C. Hu et Tn. Baker, AN ANALYSIS OF THE CAPILLARY FORCE AND OPTIMUM LIQUID VOLUME IN A TRANSIENT LIQUID-PHASE SINTERING PROCESS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 190(1-2), 1995, pp. 125-129
Citation: Ea. Mena et al., INFLAMMATORY INTERMEDIATES PRODUCED BY TISSUES ENCASING SILICONE BREAST PROSTHESES, Journal of investigative surgery, 8(1), 1995, pp. 31-42
Authors:
HU C
ZHAO J
LI GP
LIU P
WORLEY E
WHITE J
KJAR R
Citation: C. Hu et al., THE EFFECTS OF PLASMA-ETCHING INDUCED GATE OXIDE DEGRADATION ON MOSFETS 1 F NOISE/, IEEE electron device letters, 16(2), 1995, pp. 61-63