Authors: HURT MJ MENEGHESSO G ZANONI E PEATMAN WCB TSAI R SHUR MS

Citation: Mj. Hurt et al., BREAKDOWN BEHAVIOR OF LOW-POWER PSEUDOMORPHIC ALGAAS INGAAS 2-D MESFETS/, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1843-1845

Authors: HURT MJ SHUR MS PEATMAN WCB RABKIN PB

Citation: Mj. Hurt et al., QUASI-3-DIMENSIONAL MODELING OF A NOVEL 2-D MESFET, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 358-359

Authors: HURT MJ PEATMAN WCB TSAI R YTTERDAL T SHUR M MOON BJ

Citation: Mj. Hurt et al., ION-IMPLANTED 0.4-MU-M WIDE 2-D MESFET FOR LOW-POWER ELECTRONICS, Electronics Letters, 32(8), 1996, pp. 772-773

Authors: PEATMAN WCB HURT MJ PARK H YTTERDAL T TSAI R SHUR MS

Citation: Wcb. Peatman et al., NARROW CHANNEL 2-D MESFET FOR LOW-POWER ELECTRONICS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1569-1573