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Results: 1-9 |
Results: 9
THE APPLICATION OF FLIP-CHIP BONDING INTERCONNECTION TECHNIQUE ON THEMODULE ASSEMBLY OF 10 GBPS LASER-DIODE
Authors: HAN HS CHUNG HS JOE YI PARK SS JOO GC HWANG N SONG MY
Citation: Hs. Han et al., THE APPLICATION OF FLIP-CHIP BONDING INTERCONNECTION TECHNIQUE ON THEMODULE ASSEMBLY OF 10 GBPS LASER-DIODE, Journal of electronic materials, 27(8), 1998, pp. 985-989
RELIABILITY TEST AND FAILURE ANALYSIS OF 1.3-MU-M INGAASP INP UNCOOLED LASER-DIODES/
Authors: HWANG N CHO HS SONG MK KIM HM PYUN KE
Citation: N. Hwang et al., RELIABILITY TEST AND FAILURE ANALYSIS OF 1.3-MU-M INGAASP INP UNCOOLED LASER-DIODES/, Journal of the Korean Physical Society, 30, 1997, pp. 151-154
20-GHZ BANDWIDTH 1.55-MU-M DISTRIBUTED-FEEDBACK LASER-DIODE MODULES
Authors: PARK SS SONG MK HWANG N KANG SG LEE HT CHOO HR KIM HM PYUN KE
Citation: Ss. Park et al., 20-GHZ BANDWIDTH 1.55-MU-M DISTRIBUTED-FEEDBACK LASER-DIODE MODULES, Journal of the Korean Physical Society, 30, 1997, pp. 163-168
LASER WELDABILITY ANALYSIS OF HIGH-SPEED OPTICAL-TRANSMISSION DEVICE PACKAGING
Authors: SONG MK KANG SG HWANG N LEE HT PARK SS PYUN KE
Citation: Mk. Song et al., LASER WELDABILITY ANALYSIS OF HIGH-SPEED OPTICAL-TRANSMISSION DEVICE PACKAGING, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(4), 1996, pp. 758-763
CORRELATES OF THE OBJECTIVE AND SUBJECTIVE EXPERIENCES OF SEXUAL HARASSMENT IN HIGH-SCHOOL
Authors: HOUSTON S HWANG N
Citation: S. Houston et N. Hwang, CORRELATES OF THE OBJECTIVE AND SUBJECTIVE EXPERIENCES OF SEXUAL HARASSMENT IN HIGH-SCHOOL, Sex roles, 34(3-4), 1996, pp. 189-204
FABRICATION AND TRANSMISSION EXPERIMENTS OF DISTRIBUTED-FEEDBACK LASER MODULES FOR 2.5-GBS-1 OPTICAL-TRANSMISSION SYSTEMS
Authors: PARK KH JANG DH LEE JK CHO HS KIM JS HAN JH LEE HT HWANG N KIM HM PARK HM PARK SC
Citation: Kh. Park et al., FABRICATION AND TRANSMISSION EXPERIMENTS OF DISTRIBUTED-FEEDBACK LASER MODULES FOR 2.5-GBS-1 OPTICAL-TRANSMISSION SYSTEMS, Optical and quantum electronics, 27(5), 1995, pp. 547-552
HOT-CARRIER-INDUCED SERIES RESISTANCE ENHANCEMENT MODEL (HISREM) OF NMOSFETS FOR CIRCUIT SIMULATIONS AND RELIABILITY PROJECTIONS
Authors: HWANG N FORBES L
Citation: N. Hwang et L. Forbes, HOT-CARRIER-INDUCED SERIES RESISTANCE ENHANCEMENT MODEL (HISREM) OF NMOSFETS FOR CIRCUIT SIMULATIONS AND RELIABILITY PROJECTIONS, Microelectronics and reliability, 35(2), 1995, pp. 225-239
PHYSICAL MODEL OF DRAIN CONDUCTANCE, GD, DEGRADATION OF NMOSFETS DUE TO INTERFACE STATE GENERATION BY HOT-CARRIER INJECTION
Authors: KURACHI I HWANG N FORBES L
Citation: I. Kurachi et al., PHYSICAL MODEL OF DRAIN CONDUCTANCE, GD, DEGRADATION OF NMOSFETS DUE TO INTERFACE STATE GENERATION BY HOT-CARRIER INJECTION, I.E.E.E. transactions on electron devices, 41(6), 1994, pp. 964-969
TUNNELING AND THERMAL EMISSION OF ELECTRONS FROM A DISTRIBUTION OF DEEP TRAPS IN SIO2
Authors: HWANG N OR BSS FORBES L
Citation: N. Hwang et al., TUNNELING AND THERMAL EMISSION OF ELECTRONS FROM A DISTRIBUTION OF DEEP TRAPS IN SIO2, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1100-1103
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