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Results: 1-7 |
Results: 7
Evaluation of wheelchair drop seat crashworthiness
Authors: Bertocci, G Ha, D van Roosmalen, L Karg, P Deemer, E
Citation: G. Bertocci et al., Evaluation of wheelchair drop seat crashworthiness, MED ENG PHY, 23(4), 2001, pp. 249-257
New integration technology of a cell landing pad for the 0.13-mu m DRAM generation and beyond
Authors: Lee, J Lee, S Ahn, Y Lee, J Ha, D Koh, G Jeong, H Chung, T Kim, K
Citation: J. Lee et al., New integration technology of a cell landing pad for the 0.13-mu m DRAM generation and beyond, J KOR PHYS, 39(1), 2001, pp. 106-111
Configurational analysis of chiral acids as O-trifluoroacetylated (-)-menthyl esters by achiral dual-capillary column gas chromatography
Authors: Kim, KR Lee, J Ha, D Kim, JH
Citation: Kr. Kim et al., Configurational analysis of chiral acids as O-trifluoroacetylated (-)-menthyl esters by achiral dual-capillary column gas chromatography, J CHROMAT A, 891(2), 2000, pp. 257-266
Enantiomeric separation and discrimination of 2-hydroxy acids as O-trifluoroacetylated (S)-(+)-3-methyl-2-butyl esters by achiral dual-capillary column gas chromatography
Authors: Kim, KR Lee, J Ha, D Jeon, J Park, HG Kim, JH
Citation: Kr. Kim et al., Enantiomeric separation and discrimination of 2-hydroxy acids as O-trifluoroacetylated (S)-(+)-3-methyl-2-butyl esters by achiral dual-capillary column gas chromatography, J CHROMAT A, 874(1), 2000, pp. 91-100
Cs2CO3-promoted efficient carbonate and carbamate synthesis on solid phase
Authors: Salvatore, RN Flanders, VL Ha, D Jung, KW
Citation: Rn. Salvatore et al., Cs2CO3-promoted efficient carbonate and carbamate synthesis on solid phase, ORG LETT, 2(18), 2000, pp. 2797-2800
A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyond
Authors: Ha, D Shin, D Koh, GH Lee, J Lee, S Ahn, YS Jeong, H Chung, T Kim, K
Citation: D. Ha et al., A cost effective embedded DRAM integration for high density memory and high performance logic using 0.15 mu m technology node and beyond, IEEE DEVICE, 47(7), 2000, pp. 1499-1506
Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices
Authors: Ha, D Cho, C Shin, D Koh, GH Chung, TY Kim, J
Citation: D. Ha et al., Anomalous junction leakage current induced by STI dislocations and its impact on dynamic random access memory devices, IEEE DEVICE, 46(5), 1999, pp. 940-946
Risultati: 1-7 |