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Results:
1-7
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Results: 7
Authors:
Kuramata, A
Kubota, S
Soejima, R
Domen, K
Horino, K
Hacke, P
Tanahashi, T
Citation: A. Kuramata et al., Continuous wave operation of InGaN laser diodes fabricated on SiC substrates, IEICE TR EL, E83C(4), 2000, pp. 546-551
Authors:
Ramvall, P
Aoyagi, Y
Kuramata, A
Hacke, P
Domen, K
Horino, K
Citation: P. Ramvall et al., Doping-dependent optical gain in GaN, APPL PHYS L, 76(21), 2000, pp. 2994-2996
Authors:
Hacke, P
Domen, K
Kuramata, A
Tanahashi, T
Ueda, O
Citation: P. Hacke et al., Origin of the nonradiative < 11(2)over-bar0 > line defect in lateral epitaxy-grown GaN on SiC substrates, APPL PHYS L, 76(18), 2000, pp. 2547-2549
Authors:
Kuramata, A
Kubota, S
Soejima, R
Domen, K
Horino, K
Hacke, P
Tanahashi, T
Citation: A. Kuramata et al., Continuous wave operation at room temperature of InGaN laser diodes fabricated on 4H-SiC substrates, JPN J A P 2, 38(5A), 1999, pp. L481-L483
Authors:
Hacke, P
Kuramata, A
Domen, K
Horino, K
Tanahashi, T
Citation: P. Hacke et al., Photoluminescence intensity and spectral distribution of GaN films on SiC substrates - The dependence on dislocation density and structure, PHYS ST S-B, 216(1), 1999, pp. 639-644
Authors:
Hacke, P
Ramvall, P
Tanaka, S
Aoyagi, Y
Kuramata, A
Horino, K
Munekata, H
Citation: P. Hacke et al., Optical characterization of the "E2" deep level in GaN, APPL PHYS L, 74(4), 1999, pp. 543-545
Authors:
Ramvall, P
Aoyagi, Y
Kuramata, A
Hacke, P
Horino, K
Citation: P. Ramvall et al., Influence of a piezoelectric field on the electron distribution in a double GaN/Al0.14Ga0.86N heterojunction, APPL PHYS L, 74(25), 1999, pp. 3866-3868
Risultati:
1-7
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