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Citation: S. Haendler et al., Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors, MICROEL REL, 41(6), 2001, pp. 855-860

Authors: Haendler, S Jomaah, J Balestra, F Pelloie, JL Raynaud, C

Citation: S. Haendler et al., Kink-related excess noise in deep submicron partially and moderately fullydepleted unibond N-metal oxide semiconductor field effect transistor (MOSFET), JPN J A P 1, 39(4B), 2000, pp. 2261-2263

Authors: Rozeau, O Jomaah, J Haendler, S Boussey, J Balestra, F

Citation: O. Rozeau et al., SOI technologies overview for low-power low-voltage radio-frequency applications, ANALOG IN C, 25(2), 2000, pp. 93-114