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Results:
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Results: 13
Authors:
Kirilyuk, V
Zauner, ARA
Christianen, PCM
Weyher, JL
Hageman, PR
Larsen, PK
Citation: V. Kirilyuk et al., Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates, J CRYST GR, 230(3-4), 2001, pp. 477-480
Authors:
Weyher, JL
Tichelaar, FD
Zandbergen, HW
Macht, L
Hageman, PR
Citation: Jl. Weyher et al., Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN, J APPL PHYS, 90(12), 2001, pp. 6105-6109
Authors:
Haffouz, S
Kirilyuk, V
Hageman, PR
Macht, L
Weyher, JL
Larsen, PK
Citation: S. Haffouz et al., Improvement of the optical properties of metalorganic chemical vapor deposition grown GaN on sapphire by an in situ SiN treatment, APPL PHYS L, 79(15), 2001, pp. 2390-2392
Authors:
Zauner, ARA
Schermer, JJ
van Enckevort, WJP
Kirilyuk, V
Weyher, J
Grzegory, I
Hageman, PR
Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial growth on misoriented GaN substrates by MOCVD, MRS I J N S, 5, 2000, pp. NIL_365-NIL_370
Authors:
Karouta, F
Jacobs, B
Moerman, I
Jacobs, K
Weyher, JL
Porowski, S
Crane, R
Hageman, PR
Citation: F. Karouta et al., Highly chemical reactive ion etching of gallium nitride, MRS I J N S, 5, 2000, pp. NIL_768-NIL_773
Authors:
Moret, MP
Rossinger, SA
Hageman, PR
Misat, SI
Devillers, MAC
van der Linden, H
Haverkamp, E
Corbeek, WHM
Larsen, PK
Citation: Mp. Moret et al., MOCVD growth and characterization of PbTiO3 thin films on Pt/Ti/SiO2/Si substrates, INTEGR FERR, 31(1-4), 2000, pp. 305-314
Authors:
Rossinger, SA
Moret, MP
Misat, SI
Hageman, PR
Van der Linden, HA
Haverkamp, E
Corbeek, WHM
Larsen, PK
Citation: Sa. Rossinger et al., Incorporation of Pb, Ti, and Zr into MOCVD grown PbZrxTi1-xO3 thin films, INTEGR FERR, 30(1-4), 2000, pp. 71-79
Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation
Authors:
Zauner, ARA
Weyher, JL
Plomp, M
Kirilyuk, V
Grzegory, I
van Enckevort, WJP
Schermer, JJ
Hageman, PR
Larsen, PK
Citation: Ara. Zauner et al., Homo-epitaxial GaN growth on exact and misoriented single crystals: suppression of hillock formation, J CRYST GR, 210(4), 2000, pp. 435-443
Authors:
Moret, MP
Rossinger, SA
Hageman, PR
Devillers, MA
Van der Linden, H
Haverkamp, E
Larsen, PK
Duan, N
Citation: Mp. Moret et al., Interfacial layer observed by ellipsometry in MOCVD grown Pb(Zr, Ti)O-3 thin films, FERROELECTR, 241(1-4), 2000, pp. 1793-1802
Authors:
Kirilyuk, V
Zauner, ARA
Christianen, PCM
Weyher, JL
Hageman, PR
Larsen, PK
Citation: V. Kirilyuk et al., Exciton-related photoluminescence in homoepitaxial GaN of Ga and N polarities, APPL PHYS L, 76(17), 2000, pp. 2355-2357
Authors:
Hageman, PR
Devillers, MAC
Zauner, ARA
Kirilyuk, V
Bouwens, WS
Crane, RCM
Larsen, PK
Citation: Pr. Hageman et al., A study on the silane doping of hetero-epitaxial MOCVD grown GaN, PHYS ST S-B, 216(1), 1999, pp. 609-613
Authors:
Weyher, JL
Brown, PD
Zauner, ARA
Muller, S
Boothroyd, CB
Foord, DT
Hageman, PR
Humphreys, CJ
Larsen, PK
Grzegory, I
Porowski, S
Citation: Jl. Weyher et al., Morphological and structural characteristics of homoepitaxial GaN grown bymetalorganic chemical vapour deposition (MOCVD), J CRYST GR, 204(4), 1999, pp. 419-428
Authors:
de Theije, FK
Zauner, ARA
Hageman, PR
van Enckevort, WJP
Larsen, PK
Citation: Fk. De Theije et al., An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD, J CRYST GR, 197(1-2), 1999, pp. 37-47
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