Authors: Bourguiga, R Garnier, F Horowitz, G Hajlaoui, R Delannoy, P Hajlaoui, M Bouchriha, H

Citation: R. Bourguiga et al., Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene, EPJ-APPL PH, 14(2), 2001, pp. 121-125

Authors: Horowitz, G Hajlaoui, ME Hajlaoui, R

Citation: G. Horowitz et al., Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors, J APPL PHYS, 87(9), 2000, pp. 4456-4463

Authors: Horowitz, G Hajlaoui, R Bourguiga, R Hajlaoui, M

Citation: G. Horowitz et al., Theory of the organic field-effect transistor, SYNTH METAL, 101(1-3), 1999, pp. 401-404

Authors: Horowitz, G Hajlaoui, R Fichou, D El Kassmi, A

Citation: G. Horowitz et al., Gate voltage dependent mobility of oligothiophene field-effect transistors, J APPL PHYS, 85(6), 1999, pp. 3202-3206