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Results:
1-6
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Results: 6
XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces
Authors:
Cheong, SK Bunker, BA Hall, DC Snider, GL Barrios, PJ
Citation:
Sk. Cheong et al., XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces, J SYNCHROTR, 8, 2001, pp. 824-826
Operational radiation safety interview questions and answers
Authors:
Hall, DC
Citation:
Dc. Hall, Operational radiation safety interview questions and answers, HEALTH PHYS, 81(5), 2001, pp. S53-S56
Residual arsenic site in oxidized AlxGa1-xAs (x=0.96)
Authors:
Cheong, SK Bunker, BA Shibata, T Hall, DC DeMelo, CB Luo, Y Snider, GL Kramer, G El-Zein, N
Citation:
Sk. Cheong et al., Residual arsenic site in oxidized AlxGa1-xAs (x=0.96), APPL PHYS L, 78(17), 2001, pp. 2458-2460
High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator
Authors:
DeMelo, CB Hall, DC Snider, GL Xu, D Kramer, G El-Zein, N
Citation:
Cb. Demelo et al., High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator, ELECTR LETT, 36(1), 2000, pp. 84-86
Refractive index and hygroscopic stability of AlxGa1-xAs native oxides
Authors:
Hall, DC Wu, H Kou, L Luo, Y Epstein, RJ Blum, O Hou, H
Citation:
Dc. Hall et al., Refractive index and hygroscopic stability of AlxGa1-xAs native oxides, APPL PHYS L, 75(8), 1999, pp. 1110-1112
Oxidized AlxGa1-xAs heterostructure planar waveguides
Authors:
Luo, Y Hall, DC Kou, L Steingart, L Jackson, JH Blum, O Hou, H
Citation:
Y. Luo et al., Oxidized AlxGa1-xAs heterostructure planar waveguides, APPL PHYS L, 75(20), 1999, pp. 3078-3080
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1-6
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