Authors: Cheong, SK Bunker, BA Hall, DC Snider, GL Barrios, PJ

Citation: Sk. Cheong et al., XAFS and X-ray reflectivity study of III-V compound native oxide/GaAs interfaces, J SYNCHROTR, 8, 2001, pp. 824-826

Authors: Hall, DC

Citation: Dc. Hall, Operational radiation safety interview questions and answers, HEALTH PHYS, 81(5), 2001, pp. S53-S56

Authors: Cheong, SK Bunker, BA Shibata, T Hall, DC DeMelo, CB Luo, Y Snider, GL Kramer, G El-Zein, N

Citation: Sk. Cheong et al., Residual arsenic site in oxidized AlxGa1-xAs (x=0.96), APPL PHYS L, 78(17), 2001, pp. 2458-2460

Authors: DeMelo, CB Hall, DC Snider, GL Xu, D Kramer, G El-Zein, N

Citation: Cb. Demelo et al., High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator, ELECTR LETT, 36(1), 2000, pp. 84-86

Authors: Hall, DC Wu, H Kou, L Luo, Y Epstein, RJ Blum, O Hou, H

Citation: Dc. Hall et al., Refractive index and hygroscopic stability of AlxGa1-xAs native oxides, APPL PHYS L, 75(8), 1999, pp. 1110-1112

Authors: Luo, Y Hall, DC Kou, L Steingart, L Jackson, JH Blum, O Hou, H

Citation: Y. Luo et al., Oxidized AlxGa1-xAs heterostructure planar waveguides, APPL PHYS L, 75(20), 1999, pp. 3078-3080