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Results: 1-8 |
Results: 8
Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism
Authors: Yu, DP Xing, YJ Hang, QL Yan, HF Xu, J Xi, ZH Feng, SQ
Citation: Dp. Yu et al., Controlled growth of oriented amorphous silicon nanowires via a solid-liquid-solid (SLS) mechanism, PHYSICA E, 9(2), 2001, pp. 305-309
Solid-liquid-solid (SLS) growth of coaxial nanocables: silicon carbide sheathed with silicon oxide
Authors: Xing, YJ Hang, QL Yan, HF Pan, HY Xu, J Yu, DP Xi, ZH Xue, ZQ Feng, SQ
Citation: Yj. Xing et al., Solid-liquid-solid (SLS) growth of coaxial nanocables: silicon carbide sheathed with silicon oxide, CHEM P LETT, 345(1-2), 2001, pp. 29-32
Growth of amorphous silicon nanowires via a solid-liquid-solid mechanism
Authors: Yan, HF Xing, YJ Hang, QL Yu, DP Wang, YP Xu, J Xi, ZH Feng, SQ
Citation: Hf. Yan et al., Growth of amorphous silicon nanowires via a solid-liquid-solid mechanism, CHEM P LETT, 323(3-4), 2000, pp. 224-228
Growth mechanism and quantum confinement effect of silicon nanowires
Authors: Feng, SQ Yu, DP Zhang, HZ Bai, ZG Ding, Y Hang, QL Zou, YH Wang, JJ
Citation: Sq. Feng et al., Growth mechanism and quantum confinement effect of silicon nanowires, SCI CHINA A, 42(12), 1999, pp. 1316-1322
A simple method to make field emitter using ropes of single-walled carbon nanotubes
Authors: Ding, Y Hang, QL Zhang, HZ Feng, SQ Bai, ZG Yu, DP Zhang, ZX Xue, ZQ Shi, ZJ Lian, YF Gu, ZN
Citation: Y. Ding et al., A simple method to make field emitter using ropes of single-walled carbon nanotubes, CHIN PHYS L, 16(2), 1999, pp. 117-119
Ga2O3 nanowires prepared by physical evaporation
Authors: Zhang, HZ Kong, YC Wang, YZ Du, X Bai, ZG Wang, JJ Yu, DP Ding, Y Hang, QL Feng, SQ
Citation: Hz. Zhang et al., Ga2O3 nanowires prepared by physical evaporation, SOL ST COMM, 109(11), 1999, pp. 677-682
Nano-scale GeO2 wires synthesized by physical evaporation
Authors: Bai, ZG Yu, DP Zhang, HZ Ding, Y Wang, YP Gal, XZ Hang, QL Xiong, GC Feng, SQ
Citation: Zg. Bai et al., Nano-scale GeO2 wires synthesized by physical evaporation, CHEM P LETT, 303(3-4), 1999, pp. 311-314
Dependence of the silicon nanowire diameter on ambient pressure
Authors: Zhang, HZ Yu, DP Ding, Y Bai, ZG Hang, QL Feng, SQ
Citation: Hz. Zhang et al., Dependence of the silicon nanowire diameter on ambient pressure, APPL PHYS L, 73(23), 1998, pp. 3396-3398
Risultati: 1-8 |